发明授权
US08129253B2 Providing current control over wafer borne semiconductor devices using trenches
有权
提供使用沟槽的晶圆传输半导体器件的电流控制
- 专利标题： Providing current control over wafer borne semiconductor devices using trenches
- 专利标题（中）： 提供使用沟槽的晶圆传输半导体器件的电流控制
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申请号： US10486780申请日： 2002-08-12
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公开(公告)号： US08129253B2公开(公告)日： 2012-03-06
- 发明人: Michael J. Haji-Sheikh , James R. Biard , James K. Guenter , Bobby M. Hawkins
- 申请人： Michael J. Haji-Sheikh , James R. Biard , James K. Guenter , Bobby M. Hawkins
- 申请人地址： US CA Sunnyvale
- 专利权人： Finisar Corporation
- 当前专利权人： Finisar Corporation
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Maschoff Gilmore & Israelsen
- 国际申请： PCT/US02/25639 WO 20020812
- 国际公布： WO03/017325 WO 20030227
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
Disclosed are methods for providing wafer parasitic current control to a semiconductor wafer (1500) having a substrate (1520), at least one active layer (1565) and a surface layer (1510), and electrical contacts (1515) formed on said surface layer (1510). Current control can be achieved with the formation of trenches (1525) around electrical contacts, where electrical contacts and associated layers define an electronic device. Insulating implants (1530) can be placed into trenches (1525) and/or sacrificial layers (1540) can be formed between electronic contacts (1515). Trenches control current by promoting current flow within active (e.g., conductive) regions (1560) and impeding current flow through inactive (e.g., nonconductive) regions (1550). Methods of and systems for wafer level burn-in (WLBI) of semiconductor devices are also disclosed. Current control at the wafer level is important when using WLBI methods and systems.