发明授权
- 专利标题： Reacted conductive gate electrodes
- 专利标题（中）： 反应的导电栅电极
-
申请号： US10944618申请日： 2004-09-17
-
公开(公告)号： US08129821B2公开(公告)日： 2012-03-06
- 发明人: Matthew T. Currie , Richard Hammond
- 申请人： Matthew T. Currie , Richard Hammond
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L31/117
- IPC分类号： H01L31/117
摘要：
A semiconductor device and a method for fabricating a semiconductor device involve a semiconductor layer that includes a first material and a second material. The first and second materials can be silicon and germanium. A contact of the device has a portion proximal to the semiconductor layer and a portion distal to the semiconductor layer. The distal portion includes the first material and the second material. A metal layer formed adjacent to the relaxed semiconductor layer and adjacent to the distal portion of the contact is simultaneously reacted with the relaxed semiconductor layer and with the distal portion of the contact to provide metallic contact material.
公开/授权文献
- US20050042849A1 Reacted conductive gate electrodes 公开/授权日：2005-02-24
信息查询
IPC分类:
