发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US12539736申请日: 2009-08-12
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公开(公告)号: US08134181B2公开(公告)日: 2012-03-13
- 发明人: Yoshihiro Sato , Sadahiro Kato , Seikoh Yoshida
- 申请人: Yoshihiro Sato , Sadahiro Kato , Seikoh Yoshida
- 申请人地址: JP Tokyo
- 专利权人: Furukawa Electric Co., Ltd.
- 当前专利权人: Furukawa Electric Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Lowe, Hauptman, Ham & Berner, LLP
- 优先权: JP2007-039956 20070220
- 主分类号: H01L29/778
- IPC分类号: H01L29/778
摘要:
A semiconductor device includes a substrate; a buffer layer; and a compound semiconductor layer laminated on the substrate with the buffer layer in between. The buffer layer has a dislocation density in a plane in parallel to an in-plane direction thereof, so that a volume resistivity of the buffer layer becomes a substantially maximum value.
公开/授权文献
- US20100032716A1 SEMICONDUCTOR DEVICE 公开/授权日:2010-02-11