Invention Grant
- Patent Title: Bypass diode for a solar cell
- Patent Title (中): 用于太阳能电池的旁路二极管
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Application No.: US12967976Application Date: 2010-12-14
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Publication No.: US08134217B2Publication Date: 2012-03-13
- Inventor: Seung Bum Rim , Taeseok Kim , David D. Smith , Peter J. Cousins
- Applicant: Seung Bum Rim , Taeseok Kim , David D. Smith , Peter J. Cousins
- Applicant Address: US CA San Jose
- Assignee: SunPower Corporation
- Current Assignee: SunPower Corporation
- Current Assignee Address: US CA San Jose
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L21/02
- IPC: H01L21/02

Abstract:
Bypass diodes for solar cells are described. In one embodiment, a bypass diode for a solar cell includes a substrate of the solar cell. A first conductive region is disposed above the substrate, the first conductive region of a first conductivity type. A second conductive region is disposed on the first conductive region, the second conductive region of a second conductivity type opposite the first conductivity type.
Public/Granted literature
- US20110284986A1 BYPASS DIODE FOR A SOLAR CELL Public/Granted day:2011-11-24
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