Invention Grant
- Patent Title: Offset correction techniques for positioning substrates within a processing chamber
- Patent Title (中): 用于将衬底定位在处理室内的偏移校正技术
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Application No.: US12237155Application Date: 2008-09-24
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Publication No.: US08135485B2Publication Date: 2012-03-13
- Inventor: Jack Chen , Andrew D. Bailey, III , Ben Mooring , Stephen J Cain
- Applicant: Jack Chen , Andrew D. Bailey, III , Ben Mooring , Stephen J Cain
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: IP Strategy Group, P.C.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; G06F19/00 ; G05B19/418 ; G05B15/00 ; B44C1/22 ; G06K9/00

Abstract:
A method for aligning a substrate to a process center of a support mechanism is provided. The method includes determining substrate thickness after substrate processing at a plurality of orientations and at a plurality of radial distances from a geometric center of the substrate. The method also includes deriving a set of process rate values from substrate thickness and process duration. The method further includes creating for a process rate an off-centered plot, which represents a substantially concentric circle whose points are a circumference of the off-centered plot having substantially the first process rate. The method yet also includes applying a curve-fitting equation to the off-centered plot to determine a set of parameters. The method yet further includes teaching a set of robot arms the set of parameters, thereby enabling the set of robot arms to align another substrate that is supported by the support mechanism with the process center.
Public/Granted literature
- US20090088887A1 OFFSET CORRECTION TECHNIQUES FOR POSITIONING SUBSTRATES WITHIN A PROCESSING CHAMBER Public/Granted day:2009-04-02
Information query
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