Invention Grant
- Patent Title: Method for fabricating a multi-layer capacitor
- Patent Title (中): 制造多层电容器的方法
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Application No.: US12187316Application Date: 2008-08-06
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Publication No.: US08136213B2Publication Date: 2012-03-20
- Inventor: Oliver G. Schmidt
- Applicant: Oliver G. Schmidt
- Applicant Address: DE Munich
- Assignee: Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Current Assignee: Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Current Assignee Address: DE Munich
- Agency: Christie, Parker & Hale, LLP
- Priority: EP07015541 20070807
- Main IPC: H01G7/00
- IPC: H01G7/00

Abstract:
The method comprises fabricating a layer stack on a substrate, the layer stack comprising at least two electrically conducting layers and at least one electrically insulating layer arranged between the two electrically conducting layers, and displacing a first portion of the layer stack away from its original position, the first portion comprising an edge portion of the layer stack, and bending the first portion back towards a second portion of the layer stack. The bending may comprise a rolling-up of the first portion of the layer stack.
Public/Granted literature
- US20090046414A1 METHOD FOR FABRICATING A CAPACITOR AND A CAPACITOR Public/Granted day:2009-02-19
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