发明授权
- 专利标题: Peeling apparatus and manufacturing apparatus of semiconductor device
- 专利标题(中): 半导体装置的剥离装置及制造装置
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申请号: US11902514申请日: 2007-09-21
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公开(公告)号: US08137417B2公开(公告)日: 2012-03-20
- 发明人: Shingo Eguchi , Yohei Monma , Atsuhiro Tani , Misako Hirosue , Kenichi Hashimoto , Yasuharu Hosaka
- 申请人: Shingo Eguchi , Yohei Monma , Atsuhiro Tani , Misako Hirosue , Kenichi Hashimoto , Yasuharu Hosaka
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权: JP2006-266531 20060929
- 主分类号: H01L21/304
- IPC分类号: H01L21/304
摘要:
An object is to eliminate electric discharge due to static electricity generated by peeling when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element. A substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers. The film is bent along a curved surface of the pressurization roller on a side of the pressurization rollers, where the film is collected, and accordingly, peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid such as pure water is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.
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