发明授权
- 专利标题： Integrated (multilayer) circuits and process of producing the same
- 专利标题（中）： 集成（多层）电路及其制造方法
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申请号： US12611285申请日： 2009-11-03
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公开(公告)号： US08138019B2公开(公告)日： 2012-03-20
- 发明人: Sang Won Yoon , Alexandros Margomenos
- 申请人： Sang Won Yoon , Alexandros Margomenos
- 申请人地址： US KY Erlanger
- 专利权人： Toyota Motor Engineering & Manufactruing North America, Inc.
- 当前专利权人： Toyota Motor Engineering & Manufactruing North America, Inc.
- 当前专利权人地址： US KY Erlanger
- 代理机构： Gifford, Krass, Sprinkle, Anderson & Citkowski, P.C.
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/30
摘要：
A process of forming a semiconductor integrated circuit that includes the steps of: forming at least a first element having a first pattern of conductive material and including a polymer layer surrounding the conductive material, forming at least a second element having a second pattern of conductive material and including a polymer layer surrounding the conductive material, positioning the first element relative to the second element, and bonding the polymer layer of the first and second elements at a temperature below a melting temperature of the conductive materials of the first and second elements wherein the conductive material of the first element contacts the conductive material of the second element and is maintained in position by the bonded polymer layers.
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