发明授权
- 专利标题: Method of manufacturing semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US12793923申请日: 2010-06-04
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公开(公告)号: US08138022B2公开(公告)日: 2012-03-20
- 发明人: Michiaki Sugiyama , Takashi Miwa , Toshikazu Ishikawa , Tatsuya Hirai
- 申请人: Michiaki Sugiyama , Takashi Miwa , Toshikazu Ishikawa , Tatsuya Hirai
- 申请人地址: JP Kanagawa
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: Mattingly & Malur, PC
- 优先权: JP2009-152259 20090626
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A first conductive member made of metal is provided over a first wiring substrate, which is a mounting substrate in the lower tier, a through hole is provided in a second wiring substrate, which is a mounting substrate in the upper tier, at a position corresponding to the first conductive member in a plan view, and a wiring is exposed at the sidewall of the through hole. The first conductive member is inserted into the through hole on the corresponding first wiring substrate side and the first wiring substrate and the second wiring substrate are electrically coupled by filling the through hole with a second conductive member. an electrode pad that is electrically coupled to the second conductive member and over which a semiconductor member in the upper tier is mounted is formed on the main surface side of the second wiring substrate.
公开/授权文献
- US20100330742A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 公开/授权日:2010-12-30
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