发明授权
- 专利标题: Method for manufacturing a phase change memory device with pillar bottom electrode
- 专利标题(中): 具有柱底电极的相变存储器件的制造方法
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申请号: US11764678申请日: 2007-06-18
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公开(公告)号: US08138028B2公开(公告)日: 2012-03-20
- 发明人: Hsiang Lan Lung , Chieh Fang Chen , Yi Chou Chen , Shih Hung Chen , Chung Hon Lam , Eric Andrew Joseph , Alejandro Gabriel Schrott , Matthew J. Breitwisch , Geoffrey William Burr , Thomas D. Happ , Jan Boris Philipp
- 申请人: Hsiang Lan Lung , Chieh Fang Chen , Yi Chou Chen , Shih Hung Chen , Chung Hon Lam , Eric Andrew Joseph , Alejandro Gabriel Schrott , Matthew J. Breitwisch , Geoffrey William Burr , Thomas D. Happ , Jan Boris Philipp
- 申请人地址: TW Hsinchu US NY Armonk US NC Cary
- 专利权人: Macronix International Co., Ltd,International Business Machines Corporation,Qimonda North America Corp.
- 当前专利权人: Macronix International Co., Ltd,International Business Machines Corporation,Qimonda North America Corp.
- 当前专利权人地址: TW Hsinchu US NY Armonk US NC Cary
- 代理机构: Haynes Beffel & Wolfeld LLP
- 代理商 Kenta Suzue
- 主分类号: H01L45/00
- IPC分类号: H01L45/00
摘要:
A method for manufacturing a mushroom-cell type phase change memory is based upon manufacturing a pillar of bottom electrode material upon a substrate including an array of conductive contacts in electrical communication with access circuitry. A layer of electrode material is deposited making reliable electrical contact with the array of conductive contacts. Electrode material is etched to form a pattern of electrode pillars on corresponding conductive contacts. Next, a dielectric material is deposited over the pattern and planarized to provide an electrode surface exposing top surfaces of the electrode pillars. Next, a layer of programmable resistive material, such as a chalcogenide or other phase change material, is deposited, followed by deposition of a layer of a top electrode material. A device including bottom electrode pillars with larger bottom surfaces than top surfaces is described.