摘要:
A method for manufacturing a mushroom-cell type phase change memory is based upon manufacturing a pillar of bottom electrode material upon a substrate including an array of conductive contacts in electrical communication with access circuitry. A layer of electrode material is deposited making reliable electrical contact with the array of conductive contacts. Electrode material is etched to form a pattern of electrode pillars on corresponding conductive contacts. Next, a dielectric material is deposited over the pattern and planarized to provide an electrode surface exposing top surfaces of the electrode pillars. Next, a layer of programmable resistive material, such as a chalcogenide or other phase change material, is deposited, followed by deposition of a layer of a top electrode material. A device including bottom electrode pillars with larger bottom surfaces than top surfaces is described.
摘要:
A layer of nanoparticles having a dimension on the order of 10 nm is employed to form a current constricting layer or as a hardmask for forming a current constricting layer from an underlying insulator layer. The nanoparticles are preferably self-aligning and/or self-planarizing on the underlying surface. The current constricting layer may be formed within a bottom conductive plate, within a phase change material layer, within a top conductive plate, or within a tapered liner between a tapered via sidewall and a via plug contains either a phase change material or a top conductive material. The current density of the local structure around the current constricting layer is higher than the surrounding area, thus allowing local temperature to rise higher than surrounding material. The total current required to program the phase change memory device, and consequently the size of a programming transistor, is reduced due to the current constricting layer.
摘要:
A layer of nanoparticles having a dimension on the order of 10 nm is employed to form a current constricting layer or as a hardmask for forming a current constricting layer from an underlying insulator layer. The nanoparticles are preferably self-aligning and/or self-planarizing on the underlying surface. The current constricting layer may be formed within a bottom conductive plate, within a phase change material layer, within a top conductive plate, or within a tapered liner between a tapered via sidewall and a via plug contains either a phase change material or a top conductive material. The current density of the local structure around the current constricting layer is higher than the surrounding area, thus allowing local temperature to rise higher than surrounding material. The total current required to program the phase change memory device, and consequently the size of a programming transistor, is reduced due to the current constricting layer.
摘要:
A memory cell comprises a first electrode, a second electrode and a composite material. The composite material electrically couples the first electrode to the second electrode. Moreover, the composite material comprises a phase change material and a resistor material. At least a portion of the phase change material is operative to switch between a substantially crystalline phase and a substantially amorphous phase in response to an application of a switching signal to at least one of the first and second electrodes. In addition, the resistor material has a resistivity lower than that of the phase change material when the phase change material is in the substantially amorphous phase.
摘要:
A layer of nanoparticles having a dimension on the order of 10 nm is employed to form a current constricting layer or as a hardmask for forming a current constricting layer from an underlying insulator layer. The nanoparticles are preferably self-aligning and/or self-planarizing on the underlying surface. The current constricting layer may be formed within a bottom conductive plate, within a phase change material layer, within a top conductive plate, or within a tapered liner between a tapered via sidewall and a via plug contains either a phase change material or a top conductive material. The current density of the local structure around the current constricting layer is higher than the surrounding area, thus allowing local temperature to rise higher than surrounding material. The total current required to program the phase change memory device, and consequently the size of a programming transistor, is reduced due to the current constricting layer.
摘要:
A layer of nanopaiticles having a dimension on the order of 10 nm is employed to form a current constricting layer or as a hardmask for forming a current constricting layer from an underlying insulator layer. The nanoparticles are preferably self-aligning and/or self-planarizing on the underlying surface. The current constricting layer may be formed within a bottom conductive plate, within a phase change material layer, within a top conductive plate, or within a tapered liner between a tapered via sidewall and a via plug contains either a phase change material or a top conductive material. The current density of the local structure around the current constricting layer is higher than the surrounding area, thus allowing local temperature to rise higher than surrounding material. The total current required to program the phase change memory device, and consequently the size of a programming transistor, is reduced due to the current constricting layer.
摘要:
Memory devices are described along with methods for manufacturing. A memory device as described herein includes a plurality of word lines extending in a first direction, and a plurality of bit lines overlying the plurality of word lines and extending in a second direction. A plurality of memory cells are at cross-point locations. Each memory cell comprises a diode having first and second sides aligned with sides of a corresponding word line. Each memory cell also includes a bottom electrode self-centered on the diode, the bottom electrode having a top surface with a surface area less than that of the top surface of the diode. Each of the memory cells includes a strip of memory material on the top surface of the bottom electrode, the strip of memory material underlying and in electrical communication with a corresponding bit line.
摘要:
A memory cell is fabricated by forming a dielectric layer and patterning a hole in the dielectric layer. Patterning the hole is accomplished at least in part by contacting the dielectric layer with a catalytic material in the presence of a reactant under conditions effective to remove those areas of the dielectric layer in contact with the catalytic material. A phase change feature is then formed in contact with the dielectric layer such that a portion of the phase change feature at least partially fills the hole in the dielectric layer. At least a portion of the patterned dielectric layer remains in the ultimate memory cell.
摘要:
A memory cell is fabricated by forming a dielectric layer and patterning a hole in the dielectric layer. Patterning the hole is accomplished at least in part by contacting the dielectric layer with a catalytic material in the presence of a reactant under conditions effective to remove those areas of the dielectric layer in contact with the catalytic material. A phase change feature is then formed in contact with the dielectric layer such that a portion of the phase change feature at least partially fills the hole in the dielectric layer. At least a portion of the patterned dielectric layer remains in the ultimate memory cell.
摘要:
A memory cell is fabricated by forming a dielectric layer and patterning a hole in the dielectric layer. Patterning the hole is accomplished at least in part by contacting the dielectric layer with a catalytic material in the presence of a reactant under conditions effective to remove those areas of the dielectric layer in contact with the catalytic material. A phase change feature is then formed in contact with the dielectric layer such that a portion of the phase change feature at least partially fills the hole in the dielectric layer. At least a portion of the patterned dielectric layer remains in the ultimate memory cell.