Invention Grant
US08138057B2 Metal oxide alloy layer, method of forming the metal oxide alloy layer, and methods of manufacturing a gate structure and a capacitor including the metal oxide alloy layer
有权
金属氧化物合金层，形成金属氧化物合金层的方法以及制造栅极结构的方法和包括金属氧化物合金层的电容器
- Patent Title: Metal oxide alloy layer, method of forming the metal oxide alloy layer, and methods of manufacturing a gate structure and a capacitor including the metal oxide alloy layer
- Patent Title (中): 金属氧化物合金层，形成金属氧化物合金层的方法以及制造栅极结构的方法和包括金属氧化物合金层的电容器
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Application No.: US12196566Application Date: 2008-08-22
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Publication No.: US08138057B2Publication Date: 2012-03-20
- Inventor: Jung-Ho Lee , Jung-Sik Choi , Jun-Hyun Cho , Tae-Min Eom , Ji-Hyun Lee
- Applicant: Jung-Ho Lee , Jung-Sik Choi , Jun-Hyun Cho , Tae-Min Eom , Ji-Hyun Lee
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd
- Current Assignee: Samsung Electronics Co., Ltd
- Current Assignee Address: KR Suwon-Si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2005-0002168 20050110
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/336
Abstract:
A metal oxide alloy layer comprises a first layer including a first metal oxide and having a first thickness, and a second layer formed on the first layer, the second layer including a second metal oxide and having a second thickness, wherein a value of the first thickness is such that the first metal oxide is allowed to move into the second layer and a value of the second thickness is such that the second metal oxide is allowed to move into the first layer to form a single-layered structure in which the first and second metal oxides are mixed.
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