Invention Grant
- Patent Title: Programmable delay introducing circuit in self timed memory
- Patent Title (中): 自定时存储器中的可编程延迟引入电路
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Application No.: US11617286Application Date: 2006-12-28
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Publication No.: US08138455B2Publication Date: 2012-03-20
- Inventor: Nishu Kohli , Mudit Bhargava , Shishir Kumar
- Applicant: Nishu Kohli , Mudit Bhargava , Shishir Kumar
- Applicant Address: IN Greater Noida, Uttar Pradesh
- Assignee: STMicroelectronics Pvt. Ltd.
- Current Assignee: STMicroelectronics Pvt. Ltd.
- Current Assignee Address: IN Greater Noida, Uttar Pradesh
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A. Attorneys at Law
- Priority: IN3546/DEL/2005 20051230
- Main IPC: H05B1/02
- IPC: H05B1/02

Abstract:
A novel method for introducing delays in self timed memories is disclosed. In the proposed method, delays are introduced by introducing a capacitance on the path of signal to be delayed. The capacitances are realized by using idle lying metal layers in the circuit. The signal to be delayed is connected to these idle lying capacitances via programmable switches. The amount of delay introduced depends on the capacitance introduced in the path of signal which in turn depends on state of the switches. The state of the switches is controlled by delay codes provided externally to the delay introducing circuitry. Since, in the proposed method, idle-lying metal capacitances are utilized, the circuit can be implemented using minimum amount of additional hardware. Also delay provided by the proposed circuitry is a function of memory cell spice characteristics and core parasitic capacitances.
Public/Granted literature
- US20070201287A1 PROGRAMMABLE DELAY INTRODUCING CIRCUIT IN SELF TIMED MEMORY Public/Granted day:2007-08-30
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