Invention Grant
- Patent Title: Method of measuring phase of phase shift mask
- Patent Title (中): 测量相移掩模相位的方法
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Application No.: US12489600Application Date: 2009-06-23
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Publication No.: US08138483B2Publication Date: 2012-03-20
- Inventor: Dong-Gun Lee , Seong-Sue Kim
- Applicant: Dong-Gun Lee , Seong-Sue Kim
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2008-0063979 20080702
- Main IPC: G01J1/42
- IPC: G01J1/42
Abstract:
In a method of measuring a phase of a phase shift mask, initial extreme ultraviolet (EUV) light is divided into secondary EUV light portions. The secondary EUV light portions are irradiated onto the phase shift mask as incident EUV light portions, and the phase of the phase shift mask is measured from reflected incident EUV light portions.
Public/Granted literature
- US20100001199A1 METHOD OF MEASURING PHASE OF PHASE SHIFT MASK Public/Granted day:2010-01-07
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