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    EUV projection lens and optic system having the same
    2.
    发明授权
    EUV projection lens and optic system having the same 有权
    EUV投影透镜和具有相同的光学系统

    公开(公告)号：US08637840B2

    公开(公告)日：2014-01-28

    申请号：US12805003

    申请日：2010-07-07

    申请人： Dong-Gun Lee ,  Seong-Sue Kim ,  Hwan-Seok Seo

    发明人： Dong-Gun Lee ,  Seong-Sue Kim ,  Hwan-Seok Seo

    IPC分类号： G02B5/18

    CPC分类号： G21K1/06 ,  G02B5/1838 ,  G02B5/1842 ,  G02B5/1871 ,  G02B27/4222 ,  G21K2201/067

    摘要： An EUV projection lens includes a substrate and concentric diffraction patterns on the substrate. The concentric diffraction patterns have an out-of phase height with respect to EUV light and include a material through which the EUV light has a transmittance higher than about 50% at the out-of phase height. The EUV projection lens has a high first order diffraction light efficiency and an optic system having the EUV projection lens has a high resolution.

    摘要翻译： EUV投影透镜包括基板和基板上的同心衍射图案。 同心衍射图案相对于EUV光具有异相高度，并且包括在异相高度下EUV光透过率高于约50％的材料。 EUV投影透镜具有高的一阶衍射光效率，并且具有EUV投影透镜的光学系统具有高分辨率。

    METHOD AND APPARATUS FOR MEASURING AERIAL IMAGE OF EUV MASK
    3.
    发明申请
    METHOD AND APPARATUS FOR MEASURING AERIAL IMAGE OF EUV MASK 审中-公开
    用于测量EUV掩蔽的空气影像的方法和装置

    公开(公告)号：US20130056642A1

    公开(公告)日：2013-03-07

    申请号：US13542936

    申请日：2012-07-06

    申请人： Dong-gun LEE ,  Seong-sue Kim

    发明人： Dong-gun LEE ,  Seong-sue Kim

    IPC分类号： G01J1/04

    CPC分类号： G03F1/82 ,  B82Y10/00 ,  B82Y40/00 ,  G01J1/4228 ,  G01J1/4257 ,  G03F1/22

    摘要： An aerial image measuring apparatus includes an extreme ultra-violet (EUV) light generation unit configured to generate EUV light, a moving unit configured to mount an EUV mask and to move the EUV mask in x and y axis directions, a primary reduction optics configured to primarily reduce a divergence of the EUV light generated by the EUV light generation unit, a secondary reduction optics configured to secondarily reduce the divergence of the primarily reduced EUV light, and a detection unit configured to sense energy information from the secondarily reduced EUV light reflected from the plurality of regions on the EUV mask, the secondarily reduced EUV light being incident on and reflected from a plurality of regions on the EUV mask.

    摘要翻译： 一种空间图像测量装置，包括：被配置为产生EUV光的极紫外（EUV）光产生单元，被配置为安装EUV掩模并在x轴和y轴方向上移动EUV掩模的移动单元， 以主要减少由EUV光发生单元产生的EUV光的发散，配置成二次减少主要减少的EUV光的发散的次级减光光学元件和被配置为从二次降低的EUV光中检测能量信息的检测单元 在EUV掩模上的多个区域中，二次还原的EUV光入射到EUV掩模上的多个区域并从其反射。

    POLYURETHANE-COATED SPANDEX FABRIC-FUSED MIDSOLE AND APPARATUS AND METHOD FOR MANUFACTURING THE SAME
    5.
    发明申请
    POLYURETHANE-COATED SPANDEX FABRIC-FUSED MIDSOLE AND APPARATUS AND METHOD FOR MANUFACTURING THE SAME 有权

    公开(公告)号：US20120056345A1

    公开(公告)日：2012-03-08

    申请号：US13320160

    申请日：2010-05-12

    申请人： Dong-gun Lee

    发明人： Dong-gun Lee

    IPC分类号： B29C44/06

    CPC分类号： B29D35/148 ,  A43D2200/20 ,  B29C43/08 ,  B29C43/18 ,  B29D35/142

    摘要： The present invention relates to a polyurethane-coated (PU-coated) spandex fabric-fused midsole, and an apparatus and method for manufacturing the same, which allow a shoe midsole to be easily and conveniently manufactured through a single automatic process, and allows a PU-coated spandex fabric to be easily fused to a surface of the midsole in the process of manufacturing the midsole. For this purpose, there is provided a polyurethane-coated (PU-coated) spandex fabric-fused midsole manufacturing apparatus including: a central axis rotated by a driving force of a motor; a rotary disc fitted on the central axis to be rotated together with the central axis; a plurality of midsole forming mold units, which are mounted on the outer ends of support members radially extending from the outer circumference of the rotary disc, respectively; a PU-coated spandex fabric supply apparatus installed above the trace of rotation of the midsole forming mold units to provide a PU-coated spandex fabric to each of the midsole forming mold units; vacuum means installed between the rotary disc and the midsole forming mold units to vacuum the inside of a midsole forming mold unit supplied with a PU-coated spandex fabric to such an extent that the PU-coated spandex fabric comes into close contact with the inner surface of the midsole forming mold unit; a resin introducing apparatus installed outside of the trace of rotation of the midsole forming mold units to introduce polyurethane (PU) resin into the midsole forming mold unit having the PU-coated spandex fabric film in contact with inner surface thereof; and a foam-molded product removal apparatus installed outside of the trace of rotation of the midsole forming mold units to remove a foam-molded product formed by foaming the polyurethane resin introduced into the midsole forming unit by leaving the polyurethane resin in the midsole forming mold unit at a predetermined temperature for a predetermined length of time.

    METHODS AND APPARATUSES FOR MEASURING PHASE ROUGHNESS IN AN EXTREME ULTRAVIOLET MASK
    6.
    发明申请
    METHODS AND APPARATUSES FOR MEASURING PHASE ROUGHNESS IN AN EXTREME ULTRAVIOLET MASK 审中-公开
    用于测量超极紫外线掩膜相位粗糙度的方法和装置

    公开(公告)号：US20110240863A1

    公开(公告)日：2011-10-06

    申请号：US12984856

    申请日：2011-01-05

    申请人： Dong-gun Lee ,  Seong-sue Kim

    发明人： Dong-gun Lee ,  Seong-sue Kim

    IPC分类号： G01N21/17

    CPC分类号： G01N21/4788 ,  G01B11/303 ,  G01N2021/479 ,  G03F1/24 ,  G03F1/84

    摘要： Example embodiments are directed to a method and an apparatus for measuring phase roughness in an extreme ultraviolet (EUV) mask. In example embodiments, a speckle generated by the phase roughness in the EUV mask is detected by irradiating an EUV beam on the EUV mask. The phase roughness in the EUV mask is calculated and measured using the speckle.

    摘要翻译： 示例性实施例涉及用于测量极紫外（EUV）掩模中的相位粗糙度的方法和装置。 在示例实施例中，通过在EUV掩模上照射EUV波束来检测由EUV掩模中的相位粗糙度产生的散斑。 使用斑点计算和测量EUV掩模中的相位粗糙度。

    Method of manufacturing mask structure
    7.
    发明申请
    Method of manufacturing mask structure 审中-公开
    掩模结构的制造方法

    公开(公告)号：US20110065029A1

    公开(公告)日：2011-03-17

    申请号：US12882652

    申请日：2010-09-15

    申请人： Hwan-Seok Seo ,  Byoung-Sup Ahn ,  Dong-Gun Lee

    发明人： Hwan-Seok Seo ,  Byoung-Sup Ahn ,  Dong-Gun Lee

    IPC分类号： G03F1/00

    CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00

    摘要： A method of forming a mask structure for an extreme ultraviolet ray lithography (EUVL) process includes defining a substrate including a first area and a second area, such that the first area has a pattern structure configured to selectively transmit light for the EUVL process and the second area encloses the first area, forming a reflection layer on the substrate, the reflection layer including alternately stacked molybdenum layers and silicon layers on the substrate, forming a capping layer on the reflection layer, forming an absorption pattern on the capping layer, the absorption pattern including a central portion corresponding to the first area of the substrate and a peripheral portion corresponding to the second area of the substrate, and forming a blind layer on the peripheral portion of the absorption pattern.

    摘要翻译： 形成用于极紫外线光刻（EUVL）工艺的掩模结构的方法包括限定包括第一区域和第二区域的衬底，使得第一区域具有被配置为选择性地透射EUVL工艺的光的图案结构， 第二区域包围第一区域，在衬底上形成反射层，反射层在衬底上包括交替堆叠的钼层和硅层，在反射层上形成覆盖层，在覆盖层上形成吸收图案，吸收 图案包括对应于基板的第一区域的中心部分和对应于基板的第二区域的周边部分，并且在吸收图案的周边部分上形成盲层。

    System and method for measuring dimension of patterns formed on photomask
    8.
    发明申请
    System and method for measuring dimension of patterns formed on photomask 失效
    用于测量在光掩模上形成的图案的尺寸的系统和方法

    公开(公告)号：US20060066878A1

    公开(公告)日：2006-03-30

    申请号：US11151742

    申请日：2005-06-13

    申请人： Dong-Gun Lee ,  Seong-Woon Choi ,  Sang-Yong Yu ,  Seong-Yong Moon ,  Byung- Gook Kim

    发明人： Dong-Gun Lee ,  Seong-Woon Choi ,  Sang-Yong Yu ,  Seong-Yong Moon ,  Byung- Gook Kim

    IPC分类号： G01B11/04

    CPC分类号： G01B11/24 ,  G03F1/84

    摘要： A system for measuring dimension of photomasks comprises a light source emitting measuring light having a wavelength, a transmission detector for receiving the measuring light, a stage on which a photomask having circuit patterns is placed, the stage being disposed between the light source and the transmission detector, and a controller having a dimension-deciding algorithm to determine a dimension of the circuit patterns from a spectroscopic characteristic of the received measuring light, the controller being connected to the transmission detector.

    摘要翻译： 用于测量光掩模尺寸的系统包括发射具有波长的测量光的光源，用于接收测量光的透射检测器，其上放置有电路图案的光掩模的级，该级设置在光源和传输器之间 检测器和具有尺寸决定算法的控制器，以根据所接收的测量光的光谱特性来确定电路图案的尺寸，所述控制器连接到所述传输检测器。

    METHOD OF MANUFACTURING REFLECTIVE EXTREME ULTRAVIOLET MASK
    10.
    发明申请
    METHOD OF MANUFACTURING REFLECTIVE EXTREME ULTRAVIOLET MASK 审中-公开
    制造反射极限超紫外线掩膜的方法

    公开(公告)号：US20150168822A1

    公开(公告)日：2015-06-18

    申请号：US14630825

    申请日：2015-02-25

    申请人： Tae-Geun KIM ,  Dong-Wan KIM ,  Dong-Gun LEE ,  Seong-Sue KIM

    发明人： Tae-Geun KIM ,  Dong-Wan KIM ,  Dong-Gun LEE ,  Seong-Sue KIM

    IPC分类号： G03F1/24 ,  G03F1/80

    CPC分类号： G03F1/24 ,  G03F1/38 ,  G03F1/80

    摘要： A reflective extreme ultraviolet mask includes a mask substrate having an exposing region and a peripheral region, the mask substrate including a light-scattering portion in the peripheral region, a reflective layer on an upper surface of the mask substrate, the reflective layer having a first opening exposing the light-scattering portion, and an absorbing layer pattern on the reflective layer, the absorbing layer pattern having a second opening in light communication with the first opening.

    摘要翻译： 反射性极紫外线掩模包括具有曝光区域和周边区域的掩模基板，所述掩模基板在所述周边区域中包括光散射部分，所述掩模基板的上表面上的反射层，所述反射层具有第一 打开曝光光散射部分和在反射层上的吸收层图案，吸收层图案具有与第一开口光连通的第二开口。