Invention Grant
- Patent Title: Light emitting diode, package structure and manufacturing method thereof
- Patent Title (中): 发光二极管,封装结构及其制造方法
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Application No.: US12419299Application Date: 2009-04-07
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Publication No.: US08138518B2Publication Date: 2012-03-20
- Inventor: Yao-Jun Tsai , Jinn-Kong Sheu , Hsi-Hsuan Yen , Hung-Lieh Hu
- Applicant: Yao-Jun Tsai , Jinn-Kong Sheu , Hsi-Hsuan Yen , Hung-Lieh Hu
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW97136352A 20080922
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A light emitting diode (LED), a fabricating method thereof, and a package structure thereof are provided. The LED includes a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer, a current distribution modifying layer, a first electrode and a second electrode. The active layer and the second semiconductor layer form a mesa structure and expose a part of the first semiconductor layer. The current distribution modifying layer is disposed on the second semiconductor layer. The first electrode is disposed on and electrically connected to the first semiconductor layer exposed by the mesa structure. The second electrode is disposed on the current distribution modifying layer and is electrically connected to the second semiconductor layer. The LED has superior light emitting efficiency.
Public/Granted literature
- US20100072487A1 LIGHT EMITTING DIODE, PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2010-03-25
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