Invention Grant
US08138531B2 Structures, design structures and methods of fabricating global shutter pixel sensor cells
有权
制造全局快门像素传感器单元的结构,设计结构和方法
- Patent Title: Structures, design structures and methods of fabricating global shutter pixel sensor cells
- Patent Title (中): 制造全局快门像素传感器单元的结构,设计结构和方法
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Application No.: US12561581Application Date: 2009-09-17
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Publication No.: US08138531B2Publication Date: 2012-03-20
- Inventor: James William Adkisson , John Joseph Ellis-Monaghan , Mark David Jaffe , Richard John Rassel
- Applicant: James William Adkisson , John Joseph Ellis-Monaghan , Mark David Jaffe , Richard John Rassel
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts
- Agent Anthony Canale
- Main IPC: H01L31/113
- IPC: H01L31/113

Abstract:
Pixel sensor cells, method of fabricating pixel sensor cells and design structure for pixel sensor cells. The pixel sensor cells including: a photodiode body in a first region of a semiconductor layer; a floating diffusion node in a second region of the semiconductor layer, a third region of the semiconductor layer between and abutting the first and second regions; and dielectric isolation in the semiconductor layer, the dielectric isolation surrounding the first, second and third regions, the dielectric isolation abutting the first, second and third regions and the photodiode body, the dielectric isolation not abutting the floating diffusion node, portions of the second region intervening between the dielectric isolation and the floating diffusion node.
Public/Granted literature
- US20110062542A1 STRUCTURES, DESIGN STRUCTURES AND METHODS OF FABRICATING GLOBAL SHUTTER PIXEL SENSOR CELLS Public/Granted day:2011-03-17
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