公开(公告)号：US08138531B2

公开(公告)日：2012-03-20

申请号：US12561581

申请日：2009-09-17

申请人： James William Adkisson ,  John Joseph Ellis-Monaghan ,  Mark David Jaffe ,  Richard John Rassel

发明人： James William Adkisson ,  John Joseph Ellis-Monaghan ,  Mark David Jaffe ,  Richard John Rassel

IPC分类号： H01L31/113

CPC分类号： H01L27/14609 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

摘要： Pixel sensor cells, method of fabricating pixel sensor cells and design structure for pixel sensor cells. The pixel sensor cells including: a photodiode body in a first region of a semiconductor layer; a floating diffusion node in a second region of the semiconductor layer, a third region of the semiconductor layer between and abutting the first and second regions; and dielectric isolation in the semiconductor layer, the dielectric isolation surrounding the first, second and third regions, the dielectric isolation abutting the first, second and third regions and the photodiode body, the dielectric isolation not abutting the floating diffusion node, portions of the second region intervening between the dielectric isolation and the floating diffusion node.

摘要翻译： 像素传感器单元，制造像素传感器单元的方法和像素传感器单元的设计结构。 所述像素传感器单元包括：在半导体层的第一区域中的光电二极管主体; 半导体层的第二区域中的浮动扩散节点，位于第一和第二区域之间并邻接第一和第二区域的半导体层的第三区域; 以及在所述半导体层中的绝缘隔离，围绕所述第一，第二和第三区域的介电隔离，所述介质隔离邻接所述第一，第二和第三区域以及所述光电二极管主体，所述介电隔离件不邻接所述浮动扩散节点，所述第二 介于介电隔离和浮动扩散节点之间的区域。

公开(公告)号：US20110062542A1

公开(公告)日：2011-03-17

申请号：US12561581

申请日：2009-09-17

申请人： James William Adkisson ,  John Joseph Ellis-Monaghan ,  Mark David Jaffe ,  Richard John Rassel

发明人： James William Adkisson ,  John Joseph Ellis-Monaghan ,  Mark David Jaffe ,  Richard John Rassel

IPC分类号： H01L31/12 ,  H01L31/18 ,  G06F17/50

CPC分类号： H01L27/14609 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

摘要： Pixel sensor cells, method of fabricating pixel sensor cells and design structure for pixel sensor cells. The pixel sensor cells including: a photodiode body in a first region of a semiconductor layer; a floating diffusion node in a second region of the semiconductor layer, a third region of the semiconductor layer between and abutting the first and second regions; and dielectric isolation in the semiconductor layer, the dielectric isolation surrounding the first, second and third regions, the dielectric isolation abutting the first, second and third regions and the photodiode body, the dielectric isolation not abutting the floating diffusion node, portions of the second region intervening between the dielectric isolation and the floating diffusion node.

摘要翻译： 像素传感器单元，制造像素传感器单元的方法和像素传感器单元的设计结构。 所述像素传感器单元包括：在半导体层的第一区域中的光电二极管主体; 半导体层的第二区域中的浮动扩散节点，位于第一和第二区域之间并邻接第一和第二区域的半导体层的第三区域; 以及在所述半导体层中的绝缘隔离，围绕所述第一，第二和第三区域的介电隔离，所述介质隔离邻接所述第一，第二和第三区域以及所述光电二极管主体，所述介电隔离件不邻接所述浮动扩散节点，所述第二 介于介电隔离和浮动扩散节点之间的区域。

公开(公告)号：US07492048B2

公开(公告)日：2009-02-17

申请号：US11275497

申请日：2006-01-10

申请人： James William Adkisson ,  Jeffrey Peter Gambino ,  Mark David Jaffe ,  Jeffrey Bowman Johnson ,  Jerome Brett Lasky ,  Richard John Rassel

发明人： James William Adkisson ,  Jeffrey Peter Gambino ,  Mark David Jaffe ,  Jeffrey Bowman Johnson ,  Jerome Brett Lasky ,  Richard John Rassel

IPC分类号： H01L31/062

CPC分类号： H01L27/1462 ,  H01L27/14603 ,  H01L27/1463

摘要： Structures and method for forming the same. The semiconductor structure comprises a photo diode that includes a first semiconductor region and a second semiconductor region. The first and second semiconductor regions are doped with a first and second doping polarities, respectively, and the first and second doping polarities are opposite. The semiconductor structure also comprises a transfer gate that comprises (i) a first extension region, (ii) a second extension region, and (iii) a floating diffusion region. The first and second extension regions are in direct physical contact with the photo diode and the floating diffusion region, respectively. The semiconductor structure further comprises a charge pushing region. The charge pushing region overlaps the first semiconductor region and does not overlap the floating diffusion region. The charge pushing region comprises a transparent and electrically conducting material.

摘要翻译： 结构及其形成方法。 该半导体结构包括包含第一半导体区域和第二半导体区域的光电二极管。 第一和第二半导体区域分别掺杂有第一和第二掺杂极性，并且第一和第二掺杂极性相反。 半导体结构还包括传输门，其包括（i）第一延伸区，（ii）第二延伸区和（iii）浮动扩散区。 第一和第二延伸区分别与光电二极管和浮动扩散区直接物理接触。 半导体结构还包括电荷推送区域。 电荷推送区域与第一半导体区域重叠，并且不与浮动扩散区域重叠。 电荷推送区域包括透明且导电的材料。

公开(公告)号：US20090309143A1

公开(公告)日：2009-12-17

申请号：US12139524

申请日：2008-06-16

申请人： James William Adkisson ,  Rajendran Krishnasamy ,  John Joseph Ellis-Monaghan ,  Solomon Mulugeta ,  Charles Francis Musante ,  Richard J. Rassel

发明人： James William Adkisson ,  Rajendran Krishnasamy ,  John Joseph Ellis-Monaghan ,  Solomon Mulugeta ,  Charles Francis Musante ,  Richard J. Rassel

IPC分类号： H01L27/146

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14612

摘要： A pixel sensor cell, a method for fabricating or operating the pixel sensor cell and a design structure for fabricating the pixel sensor cell each include a semiconductor substrate that includes a photoactive region separated from a floating diffusion region by a channel region. At least one gate dielectric is located upon the semiconductor substrate at least in-part interposed between the photoactive region and the floating diffusion region, and at least one optically transparent gate is located upon the gate dielectric and at least in-part over the channel region. Preferably, the at least one gate dielectric is also located over the photoactive region and the at least one optically transparent gate is also located at least in-part over the photoactive region, to provide enhanced charge transfer capabilities within the pixel sensor cell, which is typically a CMOS pixel sensor cell.

公开(公告)号：US07923750B2

公开(公告)日：2011-04-12

申请号：US12139524

申请日：2008-06-16

申请人： James William Adkisson ,  Rajendran Krishnasamy ,  John Joseph Ellis-Monaghan ,  Solomon Mulugeta ,  Charles Francis Musante ,  Richard J. Rassel

发明人： James William Adkisson ,  Rajendran Krishnasamy ,  John Joseph Ellis-Monaghan ,  Solomon Mulugeta ,  Charles Francis Musante ,  Richard J. Rassel

IPC分类号： H01L31/062 ,  H01L31/113 ,  H01L31/00 ,  H01L29/74 ,  H01L31/111

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14612

摘要： A pixel sensor cell, a method for fabricating or operating the pixel sensor cell and a design structure for fabricating the pixel sensor cell each include a semiconductor substrate that includes a photoactive region separated from a floating diffusion region by a channel region. At least one gate dielectric is located upon the semiconductor substrate at least in-part interposed between the photoactive region and the floating diffusion region, and at least one optically transparent gate is located upon the gate dielectric and at least in-part over the channel region. Preferably, the at least one gate dielectric is also located over the photoactive region and the at least one optically transparent gate is also located at least in-part over the photoactive region, to provide enhanced charge transfer capabilities within the pixel sensor cell, which is typically a CMOS pixel sensor cell.

摘要翻译： 像素传感器单元，用于制造或操作像素传感器单元的方法和用于制造像素传感器单元的设计结构各自包括半导体衬底，其包括通过沟道区域与浮动扩散区域分离的光活性区域。 至少一个栅极介质至少部分地位于半导体衬底之间，介于光活性区域和浮动扩散区域之间，并且至少一个光学透明栅极位于栅极电介质上并且至少部分地位于沟道区域上 。 优选地，至少一个栅极电介质也位于光活性区域之上，并且至少一个光学透明栅极也至少部分地位于光活性区域上，以在像素传感器单元内提供增强的电荷转移能力，其是 通常是CMOS像素传感器单元。

公开(公告)号：US20090311822A1

公开(公告)日：2009-12-17

申请号：US12139523

申请日：2008-06-16

申请人： James William Adkisson ,  Rajendran Krishnasamy ,  John Joseph Ellis-Monaghan ,  Solomon Mulugeta ,  Charles Francis Musante ,  Richard J. Rassel

发明人： James William Adkisson ,  Rajendran Krishnasamy ,  John Joseph Ellis-Monaghan ,  Solomon Mulugeta ,  Charles Francis Musante ,  Richard J. Rassel

IPC分类号： H01L21/00

CPC分类号： H01L27/14614 ,  H01L27/14643 ,  H01L27/14689

摘要： A pixel sensor cell, a method for fabricating or operating the pixel sensor cell and a design structure for fabricating the pixel sensor cell each include a semiconductor substrate that includes a photoactive region separated from a floating diffusion region by a channel region. At least one gate dielectric is located upon the semiconductor substrate at least in-part interposed between the photoactive region and the floating diffusion region, and at least one optically transparent gate is located upon the gate dielectric and at least in-part over the channel region. Preferably, the at least one gate dielectric is also located over the photoactive region and the at least one optically transparent gate is also located at least in-part over the photoactive region, to provide enhanced charge transfer capabilities within the pixel sensor cell, which is typically a CMOS pixel sensor cell.

摘要翻译： 像素传感器单元，用于制造或操作像素传感器单元的方法和用于制造像素传感器单元的设计结构各自包括半导体衬底，其包括通过沟道区域与浮动扩散区域分离的光活性区域。 至少一个栅极介质至少部分地位于半导体衬底之间，介于光活性区域和浮动扩散区域之间，并且至少一个光学透明栅极位于栅极电介质上并且至少部分地位于沟道区域上 。 优选地，至少一个栅极电介质也位于光活性区域之上，并且至少一个光学透明栅极也至少部分地位于光活性区域上，以在像素传感器单元内提供增强的电荷转移能力，其是 通常是CMOS像素传感器单元。

公开(公告)号：US20100279480A1

公开(公告)日：2010-11-04

申请号：US12028847

申请日：2008-02-11

申请人： James William Adkisson ,  James Peter Gambino ,  Robert Kenneth Leidy ,  Walter Victor Lepuschenko ,  David Alan Meatyard ,  Stephen A. Mongeon ,  Richard John Rassel

发明人： James William Adkisson ,  James Peter Gambino ,  Robert Kenneth Leidy ,  Walter Victor Lepuschenko ,  David Alan Meatyard ,  Stephen A. Mongeon ,  Richard John Rassel

IPC分类号： H01L21/336 ,  H01L21/311 ,  H01L21/283

CPC分类号： H01L21/76843 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76838 ,  H01L21/76885 ,  H01L29/51 ,  H01L29/6659 ,  H01L29/7833

摘要： A method of forming a small geometry feature. The method includes forming a source layer on a top surface of a substrate; forming a mandrel on a top surface of the source layer, the mandrel having a sidewall; sputtering material from the source layer onto the sidewall of the mandrel to form a sidewall layer on the sidewall of the mandrel; and removing the mandrel. Also methods to forming wires and field effect transistors of integrated circuits.

摘要翻译： 形成小几何特征的方法。 该方法包括在基板的顶表面上形成源层; 在所述源层的顶表面上形成心轴，所述心轴具有侧壁; 将来自源层的材料溅射到心轴的侧壁上以在心轴的侧壁上形成侧壁层; 并移除心轴。 还有形成集成电路的导线和场效应晶体管的方法。

公开(公告)号：US07524694B2

公开(公告)日：2009-04-28

申请号：US11275171

申请日：2005-12-16

申请人： James William Adkisson ,  Jeffrey Peter Gambino ,  Robert Kenneth Leidy ,  Richard John Rassel

发明人： James William Adkisson ,  Jeffrey Peter Gambino ,  Robert Kenneth Leidy ,  Richard John Rassel

IPC分类号： G02B27/10

CPC分类号： G01J1/04 ,  G01J1/0407 ,  G01J1/0422 ,  G01J1/0488

摘要： A photo sensing structure and methods for forming the same. The structure includes (a) a semiconductor substrate and (b) a photo collection region on the semiconductor substrate. The structure also includes a funneled light pipe on top of the photo collection region. The funneled light pipe includes (i) a bottom cylindrical portion on top of the photo collection region of the photo collection region, and (ii) a funneled portion which has a tapered shape and is on top and in direct physical contact with the bottom cylindrical portion. The structure further includes a color filter region on top of the funneled light pipe.

摘要翻译： 感光结构及其形成方法。 该结构包括（a）半导体衬底和（b）半导体衬底上的光收集区域。 该结构还包括在照片收集区域顶部的漏斗光管。 漏斗式光管包括（i）照片收集区域的照片收集区域顶部的底部圆柱形部分，和（ii）具有锥形形状并且在顶部并与底部圆柱体直接物理接触的漏斗部分 一部分。 该结构还包括在漏斗的光管的顶部上的滤色器区域。

公开(公告)号：US07935604B2

公开(公告)日：2011-05-03

申请号：US12028847

申请日：2008-02-11

申请人： James William Adkisson ,  Jeffrey Peter Gambino ,  Robert Kenneth Leidy ,  Walter Victor Lepuschenko ,  David Alan Meatyard ,  Stephen A. Mongeon ,  Richard John Rassel

发明人： James William Adkisson ,  Jeffrey Peter Gambino ,  Robert Kenneth Leidy ,  Walter Victor Lepuschenko ,  David Alan Meatyard ,  Stephen A. Mongeon ,  Richard John Rassel

IPC分类号： H01L21/336

CPC分类号： H01L21/76843 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76838 ,  H01L21/76885 ,  H01L29/51 ,  H01L29/6659 ,  H01L29/7833

摘要： A method of forming a small geometry feature. The method includes forming a source layer on a top surface of a substrate; forming a mandrel on a top surface of the source layer, the mandrel having a sidewall; sputtering material from the source layer onto the sidewall of the mandrel to form a sidewall layer on the sidewall of the mandrel; and removing the mandrel. Also methods to forming wires and field effect transistors of integrated circuits.

摘要翻译： 形成小几何特征的方法。 该方法包括在基板的顶表面上形成源层; 在所述源层的顶表面上形成心轴，所述心轴具有侧壁; 将来自源层的材料溅射到心轴的侧壁上以在心轴的侧壁上形成侧壁层; 并移除心轴。 还有形成集成电路的导线和场效应晶体管的方法。

公开(公告)号：US06326260B1

公开(公告)日：2001-12-04

申请号：US09599703

申请日：2000-06-22

申请人： Ramachandra Divakaruni ,  James William Adkisson ,  Mary Elizabeth Weybright ,  Scott Halle ,  Jeffrey Peter Gambino ,  Heon Lee

发明人： Ramachandra Divakaruni ,  James William Adkisson ,  Mary Elizabeth Weybright ,  Scott Halle ,  Jeffrey Peter Gambino ,  Heon Lee

IPC分类号： H01L218242

CPC分类号： H01L27/10894 ,  H01L21/823462 ,  H01L27/10873

摘要： A memory device structure is provided in which the array oxide layer has a thickness that is greater than the thickness of the support oxide layer. Specifically, the structure comprises a semiconductor substrate having a gate oxide layer formed thereon, said substrate including array regions and support regions, said array regions include at least one patterned gate conductor, said patterned gate conductor having a polysilicon layer formed on said gate oxide layer, a conductor material layer formed on said polysilicon layer, and a nitride cap layer formed on said conductor material layer, said nitride cap layer and said conductor material layer having spacers formed on sidewalls thereof and said polysilicon layer having an array oxide layer formed on sidewalls thereof, said spacers being substantially flush with the oxide sidewalls, said support regions include at least one patterned gate conductor, said patterned gate conductor having a polysilicon layer formed on said gate oxide layer, a conductor material layer formed on said polysilicon layer, and a nitride cap layer on said conductor material layer, said polysilicon layer having a support oxide layer formed on sidewalls thereof, wherein said array oxide layer has a thickness that is greater than said support oxide layer.

摘要翻译： 提供了一种存储器件结构，其中阵列氧化物层的厚度大于支撑氧化物层的厚度。 具体地，该结构包括其上形成有栅极氧化层的半导体衬底，所述衬底包括阵列区域和支撑区域，所述阵列区域包括至少一个图案化栅极导体，所述图案化栅极导体具有形成在所述栅极氧化物层上的多晶硅层 形成在所述多晶硅层上的导体材料层和形成在所述导体材料层上的氮化物覆盖层，所述氮化物覆盖层和所述导体材料层具有形成在其侧壁上的隔离物，并且所述多晶硅层具有形成在侧壁上的阵列氧化物层 所述间隔件与氧化物侧壁基本齐平，所述支撑区域包括至少一个图案化栅极导体，所述图案化栅极导体具有形成在所述栅极氧化物层上的多晶硅层，形成在所述多晶硅层上的导体材料层，以及 所述多晶硅层在所述导体材料层上形成氮化物覆盖层 形成在其侧壁上的支撑氧化物层，其中所述阵列氧化物层的厚度大于所述支撑氧化物层。