Invention Grant
US08138577B2 Pulse-laser bonding method for through-silicon-via based stacking of electronic components
有权
脉冲激光焊接方法，用于电子元件的基于硅通孔的堆叠
- Patent Title: Pulse-laser bonding method for through-silicon-via based stacking of electronic components
- Patent Title (中): 脉冲激光焊接方法，用于电子元件的基于硅通孔的堆叠
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Application No.: US12057241Application Date: 2008-03-27
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Publication No.: US08138577B2Publication Date: 2012-03-20
- Inventor: Xunqing Shi , Wei Ma , Bin Xie , Chang Hwa Chung
- Applicant: Xunqing Shi , Wei Ma , Bin Xie , Chang Hwa Chung
- Applicant Address: HK Shatin, New Territories
- Assignee: Hong Kong Applied Science and Technology Research Institute Co., Ltd.
- Current Assignee: Hong Kong Applied Science and Technology Research Institute Co., Ltd.
- Current Assignee Address: HK Shatin, New Territories
- Agency: Wells St. John, P.S.
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L21/44
Abstract:
There is described a method of forming a through-silicon-via to form an interconnect between two stacked semiconductor components using pulsed laser energy. A hole is formed in each component, and each hole is filled with a plug formed of a first metal. One component is then stacked on another component such that the holes are in alignment, and a pulse of laser energy is applied to form a bond between the metal plugs.
Public/Granted literature
- US20090243046A1 Pulse-Laser Bonding Method for Through-Silicon-Via Based Stacking of Electronic Components Public/Granted day:2009-10-01
Information query
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