公开(公告)号：US10000844B2

公开(公告)日：2018-06-19

申请号：US13698884

申请日：2011-08-30

Applicant: Wei Kong ,  Zijing Lin ,  Ming Li ,  Bin Xie ,  Haiqian Wang ,  Yousong Jiang ,  Ekishu Nagae

Inventor： Wei Kong ,  Zijing Lin ,  Ming Li ,  Bin Xie ,  Haiqian Wang ,  Yousong Jiang ,  Ekishu Nagae

IPC: C23C14/00 ,  C25B11/00 ,  C25B13/00 ,  C23C14/35 ,  H01J37/34 ,  H01F7/08 ,  H01J25/50

CPC classification number: C23C14/351 ,  C23C14/35 ,  H01F7/081 ,  H01J25/50 ,  H01J37/3405 ,  H01J37/3452 ,  H01J37/3461

Abstract: A magnetic field generator arranged behind a target and for generating a magnetic field on a front surface of the target based on magnetic force lines can include a ring-shaped outer magnetic body having a pole axis in a parallel direction (X-direction) with respect to the target surface, a center magnetic body arranged on an inner side of the outer magnetic body and having a pole axis in a parallel direction (X-direction) with the direction of the pole axis of the outer magnetic body, a yoke plate for supporting the outer magnetic body and the center magnetic body from behind, and a magnetic permeable plate for changing a magnetic field distribution of the front surface of the target. The magnetic permeable plate is arranged so as to be supported by the yoke plate from behind.

公开(公告)号：US08674482B2

公开(公告)日：2014-03-18

申请号：US12273434

申请日：2008-11-18

Applicant: Xunqing Shi ,  Bin Xie ,  Chang Hwa Chung

Inventor： Xunqing Shi ,  Bin Xie ,  Chang Hwa Chung

IPC: H01L29/40

CPC classification number: H01L23/16 ,  H01L21/76898 ,  H01L23/3128 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06551 ,  H01L2225/06579 ,  H01L2924/00014 ,  H01L2924/1433 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: Subject matter disclosed herein may relate to packaging for multi-chip semiconductor devices as may be used, for example, in flash memory devices. In an example embodiment, a semiconductor chip may comprise a through-silicon via and a sidewall pad.

Abstract translation: 本文公开的主题可涉及可用于例如闪存设备中的多芯片半导体器件的封装。 在示例性实施例中，半导体芯片可以包括穿硅通孔和侧壁衬垫。

公开(公告)号：US20110313226A1

公开(公告)日：2011-12-22

申请号：US13163430

申请日：2011-06-17

Applicant: Bilge Yilmaz ,  Ulrich Müller ,  Bibiana Andrea Betancur Moreno ,  Hermann Gies ,  Feng-Shou Xiao ,  Takashi Tatsumi ,  Xinhe Bao ,  Weiping Zhang ,  Dirk de Vos ,  Meike Pfaff ,  Bin Xie ,  Haiyan Zhang

Inventor： Bilge Yilmaz ,  Ulrich Müller ,  Bibiana Andrea Betancur Moreno ,  Hermann Gies ,  Feng-Shou Xiao ,  Takashi Tatsumi ,  Xinhe Bao ,  Weiping Zhang ,  Dirk de Vos ,  Meike Pfaff ,  Bin Xie ,  Haiyan Zhang

IPC: C07C1/20 ,  C07C2/00 ,  B01D53/94 ,  C01B39/00 ,  B01D53/56

CPC classification number: C01B39/48 ,  B01D2253/108 ,  B01D2255/50 ,  B01J20/186 ,  B01J20/2803 ,  B01J20/28042 ,  B01J20/28057 ,  B01J20/3007 ,  B01J20/3042 ,  B01J29/70 ,  C01B37/02 ,  C01B39/46 ,  C10G3/49 ,  C10G11/18 ,  C10G25/03 ,  C10G2300/405 ,  C10G2300/70 ,  Y02P30/20

Abstract: Described is a process for the production of a zeolitic material having an LEV-type framework structure comprising YO2 and optionally comprising X2O3, wherein said process comprises: (1) preparing a mixture comprising one or more sources for YO2, one or more solvents, and optionally comprising seed crystals; and (2) crystallizing the mixture obtained in step (1);wherein Y is a tetravalent element, and X is a trivalent element, wherein the zeolitic material optionally comprises one or more alkali metals M, wherein the molar ratio of the total amount of the one or more solvents to the total amount of the one or more sources for YO2 based on YO2 is 9.5 or less, and wherein for crystallization temperatures of 175° C. or higher in step (2), the duration of crystallization at those temperatures is less than 14 d, as well as to a zeolitic material, preferably being obtainable or obtained according to the inventive process, said zeolitic material having an LEV-type framework structure comprising YO2 and X2O3, wherein the zeolitic material optionally comprises one or more alkali metals M, and wherein the zeolitic material displays an Y:X atomic ratio of from 1 to 9.4.

Abstract translation: 描述了一种生产具有包含YO 2和任选地包含X 2 O 3的LEV型骨架结构的沸石材料的方法，其中所述方法包括：（1）制备包含一种或多种YO 2，一种或多种溶剂的来源的混合物，以及 任选地包含晶种; 和（2）使步骤（1）中获得的混合物结晶; 其中Y是四价元素，X是三价元素，其中沸石材料任选地包含一种或多种碱金属M，其中一种或多种溶剂的总量与一种或多种溶剂的总量的摩尔比 基于YO 2的YO 2的来源为9.5或更低，并且其中对于步骤（2）中的结晶温度为175℃或更高的温度，在这些温度下的结晶持续时间小于14天，以及沸石材料， 所述沸石材料具有包含YO 2和X 2 O 3的LEV型骨架结构，其中所述沸石材料任选地包含一种或多种碱金属M，并且其中所述沸石材料显示Y：X原子 比例为1〜9.4。

公开(公告)号：US20110312486A1

公开(公告)日：2011-12-22

申请号：US13163377

申请日：2011-06-17

Applicant: Bilge Yilmaz ,  Ulrich Müller ,  Meike Pfaff ,  Hermann Gies ,  Feng-Shou Xiao ,  Takashi Tatsumi ,  Xinhe Bao ,  Weiping Zhang ,  Dirk de Vos ,  Hiroyuki Imai ,  Bin Xie ,  Haiyan Zhang

Inventor： Bilge Yilmaz ,  Ulrich Müller ,  Meike Pfaff ,  Hermann Gies ,  Feng-Shou Xiao ,  Takashi Tatsumi ,  Xinhe Bao ,  Weiping Zhang ,  Dirk de Vos ,  Hiroyuki Imai ,  Bin Xie ,  Haiyan Zhang

IPC: B01J29/04 ,  C07C1/20 ,  B01D53/56 ,  C07C2/00 ,  C01B39/00 ,  B01D53/94

CPC classification number: C01B39/46 ,  B01D53/9418 ,  B01D2251/2067 ,  B01D2253/108 ,  B01D2253/3425 ,  B01D2255/20738 ,  B01D2255/20761 ,  B01D2255/50 ,  B01D2255/9207 ,  B01D2257/402 ,  B01D2257/404 ,  B01D2257/406 ,  B01D2258/012 ,  B01J20/186 ,  B01J20/28011 ,  B01J20/2803 ,  B01J20/28042 ,  B01J20/28057 ,  B01J29/70 ,  B01J2229/186 ,  C01B37/02 ,  C01B39/48 ,  C01P2006/12 ,  C07C1/20 ,  C07C2529/70 ,  C07C2529/80 ,  C10G3/49 ,  C10G11/18 ,  C10G25/03 ,  C10G2300/405 ,  C10G2300/70 ,  Y02C20/10 ,  Y02P20/153 ,  Y02P20/52 ,  Y02P30/20

Abstract: Described is a process for the production of a zeolitic material having an LEV-type framework structure comprising YO2 and optionally comprising X2O3, wherein said process comprises (1) preparing a mixture comprising one or more sources for YO2, one or more solvents, and optionally comprising seed crystals; and (2) crystallizing the mixture obtained in step (1); wherein Y is a tetravalent element, and X is a trivalent element, and wherein the mixture crystallized in step (2) contains 3 wt.-% or less of one or more metals M based on 100 wt-% of YO2, preferably 1 wt.-% or less, more preferably 0.5 wt.-% or less, more preferably 0.1 wt.-% or less, more preferably 0.05 wt.-% or less, more preferably 0.01 wt.-% or less, more preferably 0.005 wt.-% or less, more preferably 0.001 wt.-% or less, more preferably 0.0005 wt.-% or less, more preferably 0.0001 wt.-% or less of one or more metals M based on 100 wt.-% of YO2, wherein even more preferably the mixture crystallized in step (2) contains no metal M, wherein M stands for sodium or potassium, preferably for sodium and potassium, more preferably for the group of alkali metals, wherein even more preferably M stands for the group of alkali and alkaline earth metals.

Abstract translation: 描述了一种制备具有包含YO 2和任选地包含X 2 O 3的LEV型骨架结构的沸石材料的方法，其中所述方法包括（1）制备包含一种或多种YO 2，一种或多种溶剂来源的混合物， 包括晶种; 和（2）使步骤（1）中获得的混合物结晶; 其中Y是四价元素，X是三价元素，并且其中步骤（2）中结晶的混合物含有基于100重量％的YO 2，优选1重量％的3重量％或更少的一种或多种金属M 更优选为0.5重量％以下，更优选为0.1重量％以下，更优选为0.05重量％以下，更优选为0.01重量％以下，更优选为0.005重量％ 更优选0.001重量％以下，更优选0.0005重量％以下，更优选0.0001重量％以下的一种或多种金属M，基于100重量％的YO 2 其中甚至更优选在步骤（2）中结晶的混合物不含金属M，其中M代表钠或钾，优选钠和钾，更优选碱金属组，其中甚至更优选M代表基团 的碱金属和碱土金属。

公开(公告)号：US09011815B2

公开(公告)日：2015-04-21

申请号：US13654074

申请日：2012-10-17

Applicant: Feng-Shou Xiao ,  Bin Xie ,  Ulrich Mueller ,  Bilge Yilmaz

Inventor： Feng-Shou Xiao ,  Bin Xie ,  Ulrich Mueller ,  Bilge Yilmaz

IPC: C01B39/46 ,  B01J29/70 ,  B01J29/74 ,  B01J29/76 ,  B01J29/78 ,  B01J29/88 ,  B01J35/00 ,  B01J35/04 ,  B01J35/10 ,  C10G11/05 ,  C10G11/18 ,  B01D53/02 ,  B01D53/94 ,  B01J29/18 ,  B01J37/00

CPC classification number: B01J29/7007 ,  B01D53/02 ,  B01D53/94 ,  B01D53/9413 ,  B01D2251/2062 ,  B01D2251/2067 ,  B01D2255/20738 ,  B01D2255/502 ,  B01D2257/402 ,  B01D2257/404 ,  B01D2257/406 ,  B01D2257/702 ,  B01D2257/80 ,  B01J29/18 ,  B01J29/7415 ,  B01J29/7615 ,  B01J29/7815 ,  B01J29/88 ,  B01J35/002 ,  B01J35/04 ,  B01J35/1019 ,  B01J35/1023 ,  B01J37/0009 ,  C01B39/46 ,  C10G11/05 ,  C10G11/18 ,  C10G2300/405 ,  Y02C20/10 ,  Y02P20/153

Abstract: The present invention relates to an organotemplate-free synthetic process for the production of a zeolitic material having a BEA framework structure comprising YO2 and optionally comprising X2O3, wherein said process comprises the steps of (1) preparing a mixture comprising seed crystals and at least one source for YO2; and (2) crystallizing the mixture; wherein Y is a tetravalent element, and X is a trivalent element, wherein the zeolitic material optionally comprises at least one alkali metal M, wherein when the BEA framework additionally comprises X2O3, the mixture according to step (1) comprises at least one source for X2O3, and wherein the seed crystals comprise zeolitic material having a BEA framework structure, preferably zeolite Beta.

Abstract translation: 本发明涉及一种用于生产具有包含YO 2和任选地包含X 2 O 3的BEA骨架结构的沸石材料的无机模板合成方法，其中所述方法包括以下步骤：（1）制备包含晶种和至少一种 来源为YO2; 和（2）使混合物结晶; 其中Y是四价元素，X是三价元素，其中沸石材料任选地包含至少一种碱金属M，其中当BEA骨架另外包含X 2 O 3时，根据步骤（1）的混合物包含至少一种源 X 2 O 3，并且其中所述晶种包含具有BEA骨架结构的沸石材料，优选沸石β。

公开(公告)号：US08865121B2

公开(公告)日：2014-10-21

申请号：US12486983

申请日：2009-06-18

Applicant: Feng-Shou Xiao ,  Bin Xie ,  Ulrich Mueller ,  Bilge Yilmaz

Inventor： Feng-Shou Xiao ,  Bin Xie ,  Ulrich Mueller ,  Bilge Yilmaz

IPC: C01B39/46 ,  C10G11/18 ,  B01J29/70 ,  B01J29/76 ,  B01J35/04 ,  B01J35/10 ,  B01J29/74 ,  B01J29/88 ,  B01J35/00 ,  B01J29/78 ,  C10G11/05 ,  B01D53/94 ,  B01D53/02 ,  B01J37/00 ,  B01J29/18

CPC classification number: B01J29/7007 ,  B01D53/02 ,  B01D53/94 ,  B01D53/9413 ,  B01D2251/2062 ,  B01D2251/2067 ,  B01D2255/20738 ,  B01D2255/502 ,  B01D2257/402 ,  B01D2257/404 ,  B01D2257/406 ,  B01D2257/702 ,  B01D2257/80 ,  B01J29/18 ,  B01J29/7415 ,  B01J29/7615 ,  B01J29/7815 ,  B01J29/88 ,  B01J35/002 ,  B01J35/04 ,  B01J35/1019 ,  B01J35/1023 ,  B01J37/0009 ,  C01B39/46 ,  C10G11/05 ,  C10G11/18 ,  C10G2300/405 ,  Y02C20/10 ,  Y02P20/153

Abstract: The present invention relates to an organotemplate-free synthetic process for the production of a zeolitic material having a BEA framework structure comprising YO2 and optionally comprising X2O3, wherein said process comprises the steps of (1) preparing a mixture comprising seed crystals and at least one source for YO2; and (2) crystallizing the mixture; wherein Y is a tetravalent element, and X is a trivalent element, wherein the zeolitic material optionally comprises at least one alkali metal M, wherein when the BEA framework additionally comprises X2O3; the mixture according to step (1) comprises at least one source for X2O3, and wherein the seed crystals comprise zeolitic material having a BEA framework structure, preferably zeolite Beta.

Abstract translation: 本发明涉及一种用于生产具有包含YO 2和任选地包含X 2 O 3的BEA骨架结构的沸石材料的无机模板合成方法，其中所述方法包括以下步骤：（1）制备包含晶种和至少一种 来源为YO2; 和（2）使混合物结晶; 其中Y是四价元素，X是三价元素，其中沸石材料任选地包含至少一种碱金属M，其中当BEA骨架另外包含X 2 O 3时; 根据步骤（1）的混合物包含至少一种X 2 O 3源，并且其中所述晶种包含具有BEA骨架结构的沸石材料，优选沸石β。

公开(公告)号：US20130090234A1

公开(公告)日：2013-04-11

申请号：US13805092

申请日：2011-06-17

Applicant: Bilge Yilmaz ,  Ulrich Müller ,  Meike Pfaff ,  Feng-Shou Xiao ,  Bin Xie ,  Haiyan Zhang

Inventor： Bilge Yilmaz ,  Ulrich Müller ,  Meike Pfaff ,  Feng-Shou Xiao ,  Bin Xie ,  Haiyan Zhang

IPC: C01B39/02 ,  C01B39/46

CPC classification number: C01B39/02 ,  B01J20/186 ,  B01J20/28042 ,  B01J20/28057 ,  B01J20/3007 ,  B01J29/70 ,  C01B37/02 ,  C01B39/46

Abstract: Described is an organotemplate-free synthetic process for the production of a zeolitic material having an LEV-type framework structure comprising YO2 and optionally comprising X2O3, wherein said process comprises:(1) preparing a mixture comprising seed crystals and one or more sources for YO2; and (2) crystallizing the mixture obtained in step (1); wherein Y is a tetravalent element, and X is a trivalent element, wherein the zeolitic material optionally comprises one or more alkali metals M, and wherein the seed crystals comprise zeolitic material having an LEV-type framework structure. Also described is a zeolitic material having an LEV-type framework structure obtainable by said process, as well as an organotemplate-free zeolitic material having an LEV-type framework structure comprising YO2 and optionally comprising X2O3, wherein Y is a tetravalent element, and X is a trivalent element, wherein the zeolitic material optionally comprises one or more alkali metals M, wherein said zeolitic material is non-calcined.

Abstract translation: 描述了一种用于生产具有包含YO 2和任选地包含X 2 O 3的LEV型骨架结构的沸石材料的合成方法，其中所述方法包括：（1）制备包含晶种和一种或多种YO2源的混合物 ; 和（2）使步骤（1）中获得的混合物结晶; 其中Y是四价元素，X是三价元素，其中所述沸石材料任选地包含一种或多种碱金属M，并且其中所述晶种包含具有LEV型框架结构的沸石材料。 还描述了具有通过所述方法可获得的LEV型骨架结构的沸石材料，以及具有无机无模板的沸石材料，其具有包含YO 2和任选地包含X 2 O 3的LEV型骨架结构，其中Y是四价元素，X 是三价元素，其中沸石材料任选地包含一种或多种碱金属M，其中所述沸石材料是未煅烧的。

公开(公告)号：US20120181698A1

公开(公告)日：2012-07-19

申请号：US13008845

申请日：2011-01-18

Applicant: Bin XIE ,  Pui Chung Simon LAW ,  Yat Kit TSUI

Inventor： Bin XIE ,  Pui Chung Simon LAW ,  Yat Kit TSUI

IPC: H01L23/48 ,  H01L21/50

CPC classification number: H01L21/76898 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/24 ,  H01L24/80 ,  H01L24/82 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02371 ,  H01L2224/0345 ,  H01L2224/05558 ,  H01L2224/05666 ,  H01L2224/08145 ,  H01L2224/24145 ,  H01L2224/73217 ,  H01L2224/80896 ,  H01L2224/82101 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06551 ,  H01L2924/01029 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2224/03 ,  H01L2924/01074 ,  H01L2224/80 ,  H01L2224/82 ,  H01L2924/00

Abstract: The present invention provides a method for forming a three-dimensional wafer stack having a single metallized stack via with a variable cross-sectional shape. The method uses at least first and silicon wafers. Each wafer has one or more integrated circuits formed thereon. One or more through-vias are formed in each silicon wafer followed by oxide formation on at least an upper and lower surface of the silicon wafer. The wafers are aligned such that each wafer through via is aligned with a corresponding through via in adjacent stacked wafers. Wafers are bonded to form a three-dimensional wafer stack having one or more stack vias formed from the alignment of individual wafer vias. Via metallization is performed by depositing a seed layer in each of the stack vias followed by copper electroplating to form a continuous and homogeneous metallization path through the three-dimensional wafer stack.

Abstract translation: 本发明提供一种用于形成具有可变横截面形状的具有单个金属化叠层通孔的三维晶片叠层的方法。 该方法至少使用第一和第二硅片。 每个晶片具有形成在其上的一个或多个集成电路。 在每个硅晶片中形成一个或多个通孔，随后在硅晶片的至少上表面和下表面上形成氧化物。 将晶片对准，使得通过通孔的每个晶片与相邻堆叠的晶片中的相应通孔对准。 晶片被结合以形成具有由单个晶片通孔的对准形成的一个或多个堆叠通孔的三维晶片堆叠。 通过金属化通过在每个堆叠通孔中沉积种子层，然后进行铜电镀来形成通过三维晶片堆叠的连续且均匀的金属化路径来进行。

公开(公告)号：US08138577B2

公开(公告)日：2012-03-20

申请号：US12057241

申请日：2008-03-27

Applicant: Xunqing Shi ,  Wei Ma ,  Bin Xie ,  Chang Hwa Chung

Inventor： Xunqing Shi ,  Wei Ma ,  Bin Xie ,  Chang Hwa Chung

IPC: H01L23/538 ,  H01L21/44

CPC classification number: H01L21/76898 ,  H01L21/6835 ,  H01L24/13 ,  H01L24/27 ,  H01L24/29 ,  H01L24/81 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68359 ,  H01L2224/0401 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/0557 ,  H01L2224/056 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/8182 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/0106 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00014 ,  H01L2924/013

Abstract: There is described a method of forming a through-silicon-via to form an interconnect between two stacked semiconductor components using pulsed laser energy. A hole is formed in each component, and each hole is filled with a plug formed of a first metal. One component is then stacked on another component such that the holes are in alignment, and a pulse of laser energy is applied to form a bond between the metal plugs.

Abstract translation: 描述了形成穿硅通孔以形成使用脉冲激光能量的两个堆叠的半导体部件之间的互连的方法。 在每个部件中形成孔，并且每个孔填充有由第一金属形成的塞子。 然后将一个部件堆叠在另一部件上，使得孔对准，并且施加激光能量的脉冲以在金属插塞之间形成结合。

公开(公告)号：US20110287668A1

公开(公告)日：2011-11-24

申请号：US13108012

申请日：2011-05-16

Applicant: CHIEN-JEN TING ,  BIN XIE

Inventor： CHIEN-JEN TING ,  BIN XIE

IPC: H01R24/00

CPC classification number: H01R13/521 ,  H01R2107/00

Abstract: An electrical connector includes an insulative housing (1) defining a base portion and a tongue portion extending forwardly from the base portion; a plurality of terminals (2) each having a retention portion, a contacting portion extending forwardly from the retention portion and a tail portion; an insulative spacer disposed behind the base portion, and the insulative spacer (3) defining a plurality of positioning holes for the tail portions passing therethrough, respectively; and waterproof material (5) stuffing corresponding seam between the insulative spacer and the base portion.

Abstract translation: 电连接器包括限定基部的绝缘壳体（1）和从基部向前延伸的舌部; 多个端子（2），每个端子具有保持部分，从保持部分向前延伸的接触部分和尾部; 绝缘间隔件，分别设置在所述基部的后方，所述绝缘间隔件分别限定用于所述尾部穿过的多个定位孔; 和防水材料（5）在绝缘间隔件和基部之间填充相应的接缝。