A semiconductor device formed on a semiconductor substrate may include a component formed in a contact trench located in an active cell region. The component may comprise a barrier metal deposited on a bottom and portions of sidewalls of the contact trench and a tungsten plug deposited in a remaining portion of the contact trench. The barrier metal may comprise first and second metal layers. The first metal layer may be proximate to the sidewall and the bottom of the contact trench. The first metal layer may include a nitride. The second metal layer may be between the first metal layer and the tungsten plug and between the tungsten plug and the sidewall. The second metal layer covers portions of the sidewalls of not covered by the first metal layer.