发明授权
- 专利标题： Non-volatile memory system and programming method of the same
- 专利标题（中）： 非易失性存储器系统和编程方法相同
-
申请号： US12213938申请日： 2008-06-26
-
公开(公告)号： US08139406B2公开(公告)日： 2012-03-20
- 发明人: Ki Tae Park , Yeong Taek Lee
- 申请人： Ki Tae Park , Yeong Taek Lee
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Lee & Morse, P.C.
- 优先权： KR10-2007-0063892 20070627
- 主分类号： G11C11/40
- IPC分类号： G11C11/40
摘要：
A programming method for a non-volatile memory system includes storing multi-page program data and buffering the multi-page program data from a page buffer to a memory block and programming the multi-page program data through a predetermined number of program operations. The programming the multi-page program data includes programming memory cells of the memory block using a first threshold voltage lower than a desired threshold voltage based on the multi-page program data sequentially buffered by the page buffer in units of pages and programming the memory cells using the desired threshold voltage by increasing a threshold voltage of the memory cells by a predetermined level at each successive program operation.
公开/授权文献
信息查询
