Invention Grant
- Patent Title: High temperature capacitive static/dynamic pressure sensors and methods of making the same
- Patent Title (中): 高温电容静态/动态压力传感器及其制作方法
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Application No.: US12804874Application Date: 2010-07-30
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Publication No.: US08141429B2Publication Date: 2012-03-27
- Inventor: Shuwen Guo
- Applicant: Shuwen Guo
- Applicant Address: US MN Burnsville
- Assignee: Rosemount Aerospace Inc.
- Current Assignee: Rosemount Aerospace Inc.
- Current Assignee Address: US MN Burnsville
- Agency: Edwards Wildman Palmer LLP
- Agent Scott D. Wofsy; David J. Silva
- Main IPC: G01L9/12
- IPC: G01L9/12

Abstract:
Disclosed are capacitive pressure probes or sensors for high temperature applications. The capacitive pressure sensors of the present invention include, inter alia, a sapphire diaphragm which is disposed within an interior sensing chamber of the probe housing and has a first electrode formed on a central portion thereof. The central portion of the diaphragm and the first electrode are adapted and configured to deflect in response to pressure variations encountered within an interior sensing chamber and by the pressure sensor. A sapphire substrate which has a second electrode formed thereon is fused to the sapphire diaphragm about its periphery to form a sapphire stack and to define a reference chamber therebetween. Prior to fusing the sapphire diaphragm to the sapphire substrate, all contact surfaces are chemically treated and prepared using plasma activation, so as to create a bonding layer and to reduce the temperature required for the fusion.
Public/Granted literature
- US20120024073A1 High temperature capacitive static/dynamic pressure sensors and methods of making the same Public/Granted day:2012-02-02
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