发明授权
US08143174B2 Post-deposition treatment to enhance properties of Si-O-C low K films
失效
后沉积处理以提高Si-O-C低K膜的性能
- 专利标题： Post-deposition treatment to enhance properties of Si-O-C low K films
- 专利标题（中）： 后沉积处理以提高Si-O-C低K膜的性能
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申请号： US12013232申请日： 2008-01-11
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公开(公告)号： US08143174B2公开(公告)日： 2012-03-27
- 发明人: Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
- 申请人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Kilpatrick Townsend & Stockton LLP
- 优先权： EP99402074 19990817
- 主分类号： H01L21/26
- IPC分类号： H01L21/26
摘要：
A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.
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