Invention Grant
- Patent Title: Multilayer chip varistor
- Patent Title (中): 多层芯片压敏电阻
-
Application No.: US12535307Application Date: 2009-08-04
-
Publication No.: US08143992B2Publication Date: 2012-03-27
- Inventor: Hiroyuki Sato , Goro Takeuchi , Osamu Taguchi , Ryuichi Tanaka
- Applicant: Hiroyuki Sato , Goro Takeuchi , Osamu Taguchi , Ryuichi Tanaka
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2008-221764 20080829
- Main IPC: H01C7/10
- IPC: H01C7/10

Abstract:
A multilayer chip varistor is provided as one capable of suppressing production of cracks and thereby preventing a connection failure between an internal electrode and a through-hole conductor. An internal electrode 21 is so configured as to be curved toward a direction of penetration of a through hole 10 in a connection portion 28 thereof to a through-hole conductor 27. By this configuration, a region T sandwiched between a curved surface 28a of the connection portion 28 and the through-hole conductor 27 is formed in a varistor layer 9 near the connection portion 28. In this region T, a metal concentration thereof becomes higher because of diffusion of metal of the internal electrode 21 and the through-hole conductor 27 into the varistor layer 9, and therefore, after completion of firing, the region T has an intermediate contraction percentage between that of the internal electrode 21 and through-hole conductor 27 and that of the other region of the varistor layer 9. This permits the region T to relax stress near the connection portion 28 where the internal electrode 21, through-hole conductor 27, and varistor layer 9 are congested so as to readily produce cracks.
Public/Granted literature
- US20100052841A1 MULTILAYER CHIP VARISTOR Public/Granted day:2010-03-04
Information query