公开(公告)号：US08143992B2

公开(公告)日：2012-03-27

申请号：US12535307

申请日：2009-08-04

Applicant: Hiroyuki Sato ,  Goro Takeuchi ,  Osamu Taguchi ,  Ryuichi Tanaka

Inventor： Hiroyuki Sato ,  Goro Takeuchi ,  Osamu Taguchi ,  Ryuichi Tanaka

IPC: H01C7/10

CPC classification number: H01C7/1006 ,  H01C1/142 ,  H01C1/148 ,  H01C7/18

Abstract: A multilayer chip varistor is provided as one capable of suppressing production of cracks and thereby preventing a connection failure between an internal electrode and a through-hole conductor. An internal electrode 21 is so configured as to be curved toward a direction of penetration of a through hole 10 in a connection portion 28 thereof to a through-hole conductor 27. By this configuration, a region T sandwiched between a curved surface 28a of the connection portion 28 and the through-hole conductor 27 is formed in a varistor layer 9 near the connection portion 28. In this region T, a metal concentration thereof becomes higher because of diffusion of metal of the internal electrode 21 and the through-hole conductor 27 into the varistor layer 9, and therefore, after completion of firing, the region T has an intermediate contraction percentage between that of the internal electrode 21 and through-hole conductor 27 and that of the other region of the varistor layer 9. This permits the region T to relax stress near the connection portion 28 where the internal electrode 21, through-hole conductor 27, and varistor layer 9 are congested so as to readily produce cracks.

Abstract translation: 提供了一种能够抑制裂纹的产生，从而防止内部电极和通孔导体之间的连接故障的多层芯片变阻器。 内部电极21被构造成朝向连通部分28中的通孔10的穿透方向弯曲到通孔导体27.通过这种构造，夹持在通孔10的弯曲表面28a之间的区域T 连接部分28和通孔导体27形成在连接部分28附近的可变电阻层9中。在该区域T中，由于内部电极21和通孔导体的金属的扩散，金属浓度变高 27，因此，在烧成完成后，区域T的内部电极21和通孔导体27的中间收缩率与可变电阻层9的其他区域的中间收缩率成为中间收缩。 区域T在内部电极21，通孔导体27和压敏电阻层9堵塞的连接部28附近松弛应力，容易产生裂纹。

公开(公告)号：US08125307B2

公开(公告)日：2012-02-28

申请号：US12275852

申请日：2008-11-21

Applicant: Hiroyuki Sato ,  Yo Saito ,  Ryuichi Tanaka ,  Makoto Numata ,  Goro Takeuchi

Inventor： Hiroyuki Sato ,  Yo Saito ,  Ryuichi Tanaka ,  Makoto Numata ,  Goro Takeuchi

IPC: H01C7/10

CPC classification number: H01C7/1006 ,  H01C1/084 ,  H01C7/102

Abstract: An aggregate substrate has a first varistor part, a second varistor part, and a heat dissipation layer. The first varistor part includes a first varistor element layer to exhibit nonlinear voltage-current characteristics, and a plurality of first internal electrodes juxtaposed in the first varistor element layer. The second varistor part includes a second varistor element layer to exhibit nonlinear voltage-current characteristics, and a plurality of second internal electrodes juxtaposed in the second varistor element layer. The heat dissipation layer is located between the first and second varistor parts and is in contact with the first and second varistor parts.

Abstract translation: 聚集衬底具有第一变阻器部分，第二变阻器部分和散热层。 第一变阻器部分包括呈现非线性电压电流特性的第一变阻器元件层和并置在第一变阻器元件层中的多个第一内部电极。 第二变阻器部分包括呈现非线性电压 - 电流特性的第二变阻器元件层和并置在第二变阻器元件层中的多个第二内部电极。 散热层位于第一和第二变阻器部分之间并与第一和第二变阻器部分接触。

公开(公告)号：US20110141638A1

公开(公告)日：2011-06-16

申请号：US12965103

申请日：2010-12-10

Applicant: Yousuke HOSHIKAWA ,  Mikio TSURUOKA ,  Hiroyuki SATO ,  Goro TAKEUCHI ,  Dai MATSUOKA

Inventor： Yousuke HOSHIKAWA ,  Mikio TSURUOKA ,  Hiroyuki SATO ,  Goro TAKEUCHI ,  Dai MATSUOKA

IPC: H02H9/04

CPC classification number: H01C7/10 ,  G02F1/00 ,  H01L25/167 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48997 ,  H01L2924/1305 ,  H02H9/04 ,  H02H9/042 ,  H02H9/046 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48455

Abstract: The electrostatic protection device in accordance with the present invention is the electrostatic protection device for protecting a plurality of electronic elements electrically connected in series against static electricity, the device comprising a plurality of first electrostatic protection elements having a current-voltage nonlinear resistance characteristic, a plurality of second electrostatic protection elements having a current-voltage nonlinear resistance characteristic, and a ground terminal for electrically connecting with a ground. The plurality of first electrostatic protection elements are electrically connected in parallel to the respective electronic elements, while the plurality of second electrostatic protection elements are electrically connected between input terminals of the respective electronic elements and the ground terminal.

Abstract translation: 根据本发明的静电保护装置是用于保护与静电串联电连接的多个电子元件的静电保护装置，该装置包括多个具有电流 - 电压非线性电阻特性的第一静电保护元件， 具有电流 - 电压非线性电阻特性的多个第二静电保护元件和用于与地面电连接的接地端子。 多个第一静电保护元件与各个电子元件并联电连接，而多个第二静电保护元件电连接在各个电子元件的输入端子和接地端子之间。

公开(公告)号：US07911317B2

公开(公告)日：2011-03-22

申请号：US12536944

申请日：2009-08-06

Applicant: Ryuichi Tanaka ,  Goro Takeuchi ,  Hiroyuki Sato ,  Osamu Taguchi

Inventor： Ryuichi Tanaka ,  Goro Takeuchi ,  Hiroyuki Sato ,  Osamu Taguchi

IPC: H01C7/10

CPC classification number: H01C7/10 ,  H01C7/102 ,  H01C7/18 ,  H01L2224/16225

Abstract: A multilayer chip varistor is provided as one having excellent heat radiation performance. A thickness between a first principal face 3 and an outermost internal electrode layer 11A is smaller than a thickness between an internal electrode layer 21 and the outermost internal electrode layer 11A, and because of this configuration, heat generated from a bottom face of a semiconductor light emitting device LE1 is efficiently transferred to the outermost internal electrode layer 11A having a high thermal conductivity. Furthermore, in the multilayer chip varistor V1 of an electronic component EC1, the outermost internal electrode layer 11A has a first internal electrode 13 electrically connected to a first connection electrode 7 and a first terminal electrode 5 through first through-hole conductors 17, and a second internal electrode 15 electrically connected to a second connection electrode 8 and a second terminal electrode 6 through second through-hole conductors 27. Because of this configuration, heat H generated from the semiconductor light emitting device LE1 is transferred to both the first internal electrode 13 and the second internal electrode 15, so as to be transferred to the first through-hole conductors 17 and the second through-hole conductors 27. This leads to well-balanced transfer of heat to the first through-hole conductors 17 and the second through-hole conductors 27.

Abstract translation: 提供具有优异的散热性能的多层芯片变阻器。 第一主面3和最外侧内部电极层11A之间的厚度小于内部电极层21和最外侧内部电极层11A之间的厚度，并且由于该构造，从半导体光的底面产生的热量 发光装置LE1被有效地传递到具有高导热性的最外层的内部电极层11A。 此外，在电子部件EC1的多层片状变阻器V1中，最外侧的内部电极层11A具有通过第一通孔导体17与第一连接电极7和第一端子电极5电连接的第一内部电极13， 第二内部电极15通过第二通孔导体27与第二连接电极8和第二端子电极6电连接。由此，半导体发光装置LE1产生的热H被传送到第一内部电极13 和第二内部电极15，以便转移到第一通孔导体17和第二通孔导体27中。这导致热量平衡地传递到第一通孔导体17和第二通孔导体17。 孔导体27。

公开(公告)号：US20090189732A1

公开(公告)日：2009-07-30

申请号：US12275852

申请日：2008-11-21

Applicant: Hiroyuki SATO ,  Yo SAITO ,  Ryuichi TANAKA ,  Makoto NUMATA ,  Goro TAKEUCHI

Inventor： Hiroyuki SATO ,  Yo SAITO ,  Ryuichi TANAKA ,  Makoto NUMATA ,  Goro TAKEUCHI

IPC: H01C7/10

CPC classification number: H01C7/1006 ,  H01C1/084 ,  H01C7/102

Abstract: An aggregate substrate has a first varistor part, a second varistor part, and a heat dissipation layer The first varistor part includes a first varistor element layer to exhibit nonlinear voltage-current characteristics, and a plurality of first internal electrodes juxtaposed in the first varistor element layer. The second varistor part includes a second varistor element layer to exhibit nonlinear voltage-current characteristics, and a plurality of second internal electrodes juxtaposed in the second varistor element layer The heat dissipation layer is located between the first and second varistor parts and is in contact with the first and second varistor parts.

Abstract translation: 聚集衬底具有第一变阻器部分，第二变阻器部分和散热层。第一变阻器部分包括呈现非线性电压电流特性的第一变阻器元件层和并置在第一变阻器元件中的多个第一内部电极 层。 第二变阻器部分包括呈现非线性电压电流特性的第二变阻器元件层和并置在第二变阻器元件层中的多个第二内部电极。散热层位于第一和第二变阻器部分之间，并与 第一和第二变阻器部件。

公开(公告)号：US20070223170A1

公开(公告)日：2007-09-27

申请号：US11717098

申请日：2007-03-13

Applicant: Hiroyuki Sato ,  Yo Saito ,  Hitoshi Tanaka ,  Makoto Numata ,  Goro Takeuchi

Inventor： Hiroyuki Sato ,  Yo Saito ,  Hitoshi Tanaka ,  Makoto Numata ,  Goro Takeuchi

IPC: H02H9/06

CPC classification number: H01C7/102 ,  H01C1/142 ,  H01L25/167 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225

Abstract: A varistor comprises an element body, two external electrodes, and a metal conductor. The element body includes a portion having first and second faces opposing each other. Two external electrodes are arranged on the first face of the element body. The metal conductor is arranged on the second face of the element body. The metal conductor has a thermal conductivity higher than that of the element body. At least a region between the two external electrodes and metal conductor in the element body exhibits a nonlinear current-voltage characteristic. The heat transmitted to the varistor is efficiently diffused from the metal conductor in the varistor.

Abstract translation: 变阻器包括元件体，两个外部电极和金属导体。 元件主体包括具有彼此相对的第一和第二面的部分。 两个外部电极布置在元件主体的第一面上。 金属导体布置在元件主体的第二面上。 金属导体的导热系数高于元件体的导热系数。 元件体内的至少两个外部电极和金属导体之间的区域呈现非线性电流 - 电压特性。 传输到变阻器的热量有效地从压敏电阻中的金属导体扩散。

公开(公告)号：US07932807B2

公开(公告)日：2011-04-26

申请号：US12396942

申请日：2009-03-03

Applicant: Hiroyuki Sato ,  Makoto Numata ,  Yo Saito ,  Hitoshi Tanaka ,  Goro Takeuchi ,  Osamu Taguchi ,  Ryuichi Tanaka

Inventor： Hiroyuki Sato ,  Makoto Numata ,  Yo Saito ,  Hitoshi Tanaka ,  Goro Takeuchi ,  Osamu Taguchi ,  Ryuichi Tanaka

IPC: H01C7/10

CPC classification number: H01C7/102

Abstract: A first varistor section includes a first face of an element body, and a third face facing the first face. The first varistor section has a first varistor element body, a first varistor electrode electrically connected to a first external electrode, and a second varistor electrode electrically connected to a second external electrode. A heat radiation section has a first heat radiation portion kept in contact with the third face of the first varistor section and electrically connected to the first and third external electrodes, a second heat radiation portion kept in contact with the third face of the first varistor section and electrically connected to the second and fourth external electrodes, and an insulating layer located between the first heat radiation portion and the second heat radiation portion and electrically insulating the first heat radiation portion and the second heat radiation portion from each other. The first heat radiation portion and the second heat radiation portion contain a metal.

Abstract translation: 第一变阻器部分包括元件主体的第一面和面向第一面的第三面。 第一变阻器部具有第一变阻器元件本体，与第一外部电极电连接的第一变阻器电极和与第二外部电极电连接的第二变阻器电极。 散热部具有与第一可变电阻部的第三面保持接触并与第一和第三外部电极电连接的第一散热部，与第一可变电阻部的第三面保持接触的第二散热部 并且电连接到第二和第四外部电极，以及位于第一散热部分和第二散热部分之间的绝缘层，并且使第一散热部分和第二散热部分彼此电绝缘。 第一散热部和第二散热部包含金属。

公开(公告)号：US07932806B2

公开(公告)日：2011-04-26

申请号：US12055671

申请日：2008-03-26

Applicant: Hiroyuki Sato ,  Yo Saito ,  Ryuichi Tanaka ,  Makoto Numata ,  Goro Takeuchi

Inventor： Hiroyuki Sato ,  Yo Saito ,  Ryuichi Tanaka ,  Makoto Numata ,  Goro Takeuchi

IPC: H01C7/10

CPC classification number: H01C1/084 ,  H01C1/14 ,  H01C7/1006 ,  H01C7/18 ,  H01L25/167 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/14 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: In a varistor, a heat radiating portion contains the same components as ZnO that is the main component of a varistor element body, as metal oxides, thereby, the structural components of the varistor element body and the heat radiating portion are caused to be common. During firing, Ag contained in the heat radiating portion diffuses into the grain boundaries of ZnO, near the interface between surfaces of the heat radiating portion and the varistor element body. Consequently, in the varistor, cracks hardly occur between the varistor portion and the heat radiating portion during firing (or during binder removal), thereby, ensuring sufficient bonding strength between the varistor portion and the heat radiating portion. Therefore, heat conducted to the varistor portion is radiated efficiently conducting through electrically conducted paths formed in the heat radiating portion from the surface facing the varistor element body to other three surfaces of the heat radiating portion.

Abstract translation: 在变阻器中，散热部包含与作为金属氧化物的可变电阻元件主体的主要成分的ZnO相同的成分，因此使可变电阻元件主体和散热部的结构成为普通的。 在烧成期间，散热部中的Ag扩散到ZnO的晶界附近，靠近散热部和可变电阻元件主体的表面之间的界面。 因此，在压敏电阻中，在烧结（或者去除粘合剂期间）在变阻器部分和散热部分之间几乎不发生裂纹，从而确保了可变电阻部分和散热部分之间的充分的接合强度。 因此，传导到变阻器部分的热量从形成在散热部分的导电路径从与压敏电阻元件主体相对的表面有效地传导到散热部分的其它三个表面。

公开(公告)号：US07791449B2

公开(公告)日：2010-09-07

申请号：US11717098

申请日：2007-03-13

Applicant: Hiroyuki Sato ,  Yo Saito ,  Hitoshi Tanaka ,  Makoto Numata ,  Goro Takeuchi

Inventor： Hiroyuki Sato ,  Yo Saito ,  Hitoshi Tanaka ,  Makoto Numata ,  Goro Takeuchi

IPC: H01C7/10

CPC classification number: H01C7/102 ,  H01C1/142 ,  H01L25/167 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225

Abstract: A varistor comprises an element body, two external electrodes, and a metal conductor. The element body includes a portion having first and second faces opposing each other. Two external electrodes are arranged on the first face of the element body. The metal conductor is arranged on the second face of the element body. The metal conductor has a thermal conductivity higher than that of the element body. At least a region between the two external electrodes and metal conductor in the element body exhibits a nonlinear current-voltage characteristic. The heat transmitted to the varistor is efficiently diffused from the metal conductor in the varistor.

Abstract translation: 变阻器包括元件体，两个外部电极和金属导体。 元件主体包括具有彼此相对的第一和第二面的部分。 两个外部电极布置在元件主体的第一面上。 金属导体布置在元件主体的第二面上。 金属导体的导热系数高于元件体的导热系数。 元件体内的至少两个外部电极和金属导体之间的区域呈现非线性电流 - 电压特性。 传输到变阻器的热量有效地从压敏电阻中的金属导体扩散。

公开(公告)号：US20100117782A1

公开(公告)日：2010-05-13

申请号：US12426589

申请日：2009-04-20

Applicant: Hiroyuki SATO ,  Makoto NUMATA ,  Yo SAITO ,  Hitoshi TANAKA ,  Goro TAKEUCHI ,  Osamu TAGUCHI ,  Ryuichi TANAKA

Inventor： Hiroyuki SATO ,  Makoto NUMATA ,  Yo SAITO ,  Hitoshi TANAKA ,  Goro TAKEUCHI ,  Osamu TAGUCHI ,  Ryuichi TANAKA

IPC: H01C7/10

CPC classification number: H01C7/108 ,  H01C7/1006 ,  H01L23/62 ,  H01L23/647 ,  H01L33/641 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16268 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A varistor having a favorable heat-dissipating property is provided.In the varistor, a composite part having a favorable heat-dissipating property formed by a composite material composed of ZnO and Ag is arranged between main faces of a varistor matrix. Therefore, the heat transmitted from a semiconductor light-emitting device to a varistor part through an outer electrode can rapidly be transferred toward a main face on the opposite side through the composite part. In this varistor, side faces excluding inner side faces are exposed at side faces of the varistor matrix. Such a structure yields a favorable heat-dissipating property.

Abstract translation: 提供具有良好的散热特性的变阻器。 在变阻器中，通过由ZnO和Ag组成的复合材料形成的具有良好的散热特性的复合部件设置在压敏电阻矩阵的主面之间。 因此，通过外部电极从半导体发光元件传递到变阻器部分的热量可以快速地通过复合部件向相反侧的主面转移。 在该压敏电阻中，除了内侧面的侧面在压敏电阻矩阵的侧面露出。 这种结构产生良好的散热性能。