Invention Grant
- Patent Title: Method of operating ion source and ion implanting apparatus
- Patent Title (中): 操作离子源和离子注入装置的方法
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Application No.: US11583040Application Date: 2006-10-19
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Publication No.: US08147705B2Publication Date: 2012-04-03
- Inventor: Yutaka Inouchi , Syojiro Dohi , Yasunori Ando , Yasuhiro Matsuda
- Applicant: Yutaka Inouchi , Syojiro Dohi , Yasunori Ando , Yasuhiro Matsuda
- Applicant Address: JP Kyoto
- Assignee: Nissin Ion Equipment Co., Ltd.
- Current Assignee: Nissin Ion Equipment Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2005-305365 20051020
- Main IPC: C23F1/00
- IPC: C23F1/00 ; H01J37/08
Abstract:
When an ion beam 4 is to be extracted from an ion source 2 by using a gas containing boron trifluoride as an ion source gas 50 for supplying the gas into a plasma chamber 20 for the ion source 2, a bias voltage VB of a plasma electrode 31 with respect to the plasma chamber 20 for the ion source 2 is set to be positive by a bias circuit 64.
Public/Granted literature
- US20070089833A1 Method of operating ion source and ion implanting apparatus Public/Granted day:2007-04-26
Information query
