Invention Grant
- Patent Title: Method for fabricating active device array substrate
- Patent Title (中): 制造有源器件阵列衬底的方法
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Application No.: US12559506Application Date: 2009-09-15
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Publication No.: US08148185B2Publication Date: 2012-04-03
- Inventor: Yu-Cheng Chen , Chen-Yueh Li , Ching-Sang Chuang , Ching-Chieh Shih , An-Thung Cho
- Applicant: Yu-Cheng Chen , Chen-Yueh Li , Ching-Sang Chuang , Ching-Chieh Shih , An-Thung Cho
- Applicant Address: TW Hsinchu
- Assignee: Au Optronics Corporation
- Current Assignee: Au Optronics Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW98112811A 20090417
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method for fabricating an active device array substrate is provided. First, a substrate having a display area and a sensing area is provided. Then, a first patterned conductor layer is formed on the display area of the substrate. A gate insulator is formed on the substrate. A patterned semiconductor layer, a second patterned conductor layer and a patterned photosensitive dielectric layer are formed on the gate insulator, wherein the second patterned conductor layer includes a source electrode, a drain electrode and a lower electrode, the patterned photosensitive dielectric layer covering the second patterned conductor layer includes an interface protection layer disposed on the source electrode and the drain electrode and a photo-sensing layer disposed on the lower electrode. A passivation layer is then formed on the substrate. After that, a third patterned conductor layer including a pixel electrode and an upper electrode is formed on the passivation layer.
Public/Granted literature
- US20100267177A1 METHOD FOR FABRICATING ACTIVE DEVICE ARRAY SUBSTRATE Public/Granted day:2010-10-21
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