公开(公告)号：US07087363B2

公开(公告)日：2006-08-08

申请号：US10650977

申请日：2003-08-29

Applicant: Chih-Chiang Chen ,  Ching-Sang Chuang ,  Jiun-Jye Chang

Inventor： Chih-Chiang Chen ,  Ching-Sang Chuang ,  Jiun-Jye Chang

IPC: G03F7/00

CPC classification number: H01L29/66757 ,  H01L29/78621

Abstract: A method of forming a top gate thin film transistor (TFT). By performing photolithography using a first reticle, a photoresist layer having a thick photoresist layer portion and a thin photoresist layer portion is formed on a silicon layer in an active area. Thus, a channel layer and source/drain regions in a silicon island are defined by the same patterning process. In addition, a gate and an LDD region in the silicon island are defined by photolithography using a second reticle and a backside exposure process. Accordingly, the top gate TFT fabrication process of the present invention requires only two reticles, and thereby reduces costs.

Abstract translation: 一种形成顶栅极薄膜晶体管（TFT）的方法。 通过使用第一掩模版进行光刻，在活性区域的硅层上形成具有厚的光致抗蚀剂层部分和光致抗蚀剂层部分的光致抗蚀剂层。 因此，通过相同的图案化工艺限定硅岛中的沟道层和源/漏区。 此外，硅岛中的栅极和LDD区域通过使用第二掩模版和背面曝光工艺的光刻来定义。 因此，本发明的顶栅TFT制造方法仅需要两个掩模版，从而降低成本。

公开(公告)号：US06692983B1

公开(公告)日：2004-02-17

申请号：US10400032

申请日：2003-03-26

Applicant: Chih-Chiang Chen ,  Ching-Sang Chuang ,  Jiun-Jye Chang

Inventor： Chih-Chiang Chen ,  Ching-Sang Chuang ,  Jiun-Jye Chang

IPC: H01L2100

CPC classification number: G02F1/136227 ,  G02F2001/136222 ,  H01L27/14685

Abstract: A method of forming a color filter on a substrate having pixel driving elements. A substrate having a plurality of light-transmitting areas and active areas is provided. A pixel driving element is formed on the substrate in each active area, wherein an insulation layer is formed between each pixel driving element. A planarization layer is formed on the pixel driving elements and the insulation layer. Part of the planarization layer is removed to form contact holes and openings, wherein the contact holes expose part of the pixel driving elements, and the openings expose the insulation layer in the light-transmitting areas. Color pigment is filled into the openings to form a color filter on the substrate having the pixel driving elements. Transparent pixel electrodes are formed in the contact holes to electrically connect the pixel driving elements, wherein the transparent electrodes extend onto part of the color filter.

Abstract translation: 一种在具有像素驱动元件的基板上形成滤色器的方法。 提供具有多个透光区域和有源区域的基板。 在每个有源区域中的衬底上形成像素驱动元件，其中在每个像素驱动元件之间形成绝缘层。 在像素驱动元件和绝缘层上形成平坦化层。 去除平坦化层的一部分以形成接触孔和开口，其中接触孔暴露部分像素驱动元件，并且开口暴露透光区域中的绝缘层。 将彩色颜料填充到开口中，以在具有像素驱动元件的基板上形成滤色器。 透明像素电极形成在接触孔中以电连接像素驱动元件，其中透明电极延伸到滤色器的一部分上。

公开(公告)号：US06870585B2

公开(公告)日：2005-03-22

申请号：US10622795

申请日：2003-07-18

Applicant: Chih-Chiang Chen ,  Jiun-Jye Chang ,  Ching-Sang Chuang

Inventor： Chih-Chiang Chen ,  Jiun-Jye Chang ,  Ching-Sang Chuang

IPC: G02B5/08 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1362

CPC classification number: G02F1/133555 ,  G02F1/133371 ,  G02F1/133514 ,  G02F2001/136222

Abstract: A transflective LCD device having various cell gaps. The transflective LCD device is characterized by the passivation layer being formed on a lower substrate in a reflective region. A color filter layer is formed above the passivation layer, wherein a first thickness of the color filter layer in the reflective region is smaller than a second thickness of the color filter layer in a transmissive region. A transparent organic element is formed on an inner side of an upper substrate in the reflective region for bridging a gap in a liquid crystal layer between upper and lower substrates, wherein one end of the transparent organic element shores up the lower substrate. Thus, the gap thickness in the reflective region is smaller than that in the transmissive region.

Abstract translation: 具有各种单元间隙的透反射LCD装置。 半透射型LCD器件的特征在于钝化层形成在反射区域中的下基板上。 在钝化层上方形成滤色器层，其中反射区域中的滤色器层的第一厚度小于透射区域中的滤色器层的第二厚度。 透明有机元件形成在反射区域中的上基板的内侧，用于桥接上基板和下基板之间的液晶层中的间隙，其中透明有机元件的一端向下延伸到下基板。 因此，反射区域中的间隙厚度小于透射区域中的间隙厚度。

公开(公告)号：US20120112214A1

公开(公告)日：2012-05-10

申请号：US13353328

申请日：2012-01-19

Applicant: Yu-Cheng Chen ,  Chen-Yueh Li ,  Ching-Sang Chuang ,  Ching-Chieh Shih ,  An-Thung Cho

Inventor： Yu-Cheng Chen ,  Chen-Yueh Li ,  Ching-Sang Chuang ,  Ching-Chieh Shih ,  An-Thung Cho

IPC: H01L27/15

CPC classification number: H01L27/1288 ,  H01L27/1214

Abstract: An active device array substrate is provided. First, a substrate having a display area and a sensing area is provided. Then, a first patterned conductor layer is disposed on the display area of the substrate. A gate insulator is disposed on the substrate. A patterned semiconductor layer, a second patterned conductor layer and a patterned photosensitive dielectric layer are disposed on the gate insulator, wherein the second patterned conductor layer includes a source electrode, a drain electrode and a lower electrode, the patterned photosensitive dielectric layer covering the second patterned conductor layer includes an interface protection layer disposed on the source electrode and the drain electrode and a photo-sensing layer disposed on the lower electrode. A passivation layer is then disposed on the substrate. After that, a third patterned conductor layer including a pixel electrode and an upper electrode is disposed on the passivation layer.

Abstract translation: 提供有源器件阵列衬底。 首先，提供具有显示区域和感测区域的基板。 然后，在基板的显示区域上设置第一图案化导体层。 栅极绝缘体设置在基板上。 图案化半导体层，第二图案化导体层和图案化感光介电层设置在栅极绝缘体上，其中第二图案化导体层包括源电极，漏电极和下电极，图案化的感光介电层覆盖第二 图案化导体层包括设置在源电极和漏电极上的界面保护层和设置在下电极上的感光层。 然后在衬底上设置钝化层。 之后，在钝化层上设置包括像素电极和上部电极的第三图案化导体层。

公开(公告)号：US20100267177A1

公开(公告)日：2010-10-21

申请号：US12559506

申请日：2009-09-15

Applicant: Yu-Cheng Chen ,  Chen-Yueh Li ,  Ching-Sang Chuang ,  Ching-Chieh Shih ,  An-Thung Cho

Inventor： Yu-Cheng Chen ,  Chen-Yueh Li ,  Ching-Sang Chuang ,  Ching-Chieh Shih ,  An-Thung Cho

IPC: H01L21/28

CPC classification number: H01L27/1288 ,  H01L27/1214

Abstract: A method for fabricating an active device array substrate is provided. First, a substrate having a display area and a sensing area is provided. Then, a first patterned conductor layer is formed on the display area of the substrate. A gate insulator is formed on the substrate. A patterned semiconductor layer, a second patterned conductor layer and a patterned photosensitive dielectric layer are formed on the gate insulator, wherein the second patterned conductor layer includes a source electrode, a drain electrode and a lower electrode, the patterned photosensitive dielectric layer covering the second patterned conductor layer includes an interface protection layer disposed on the source electrode and the drain electrode and a photo-sensing layer disposed on the lower electrode. A passivation layer is then formed on the substrate. After that, a third patterned conductor layer including a pixel electrode and an upper electrode is formed on the passivation layer.

Abstract translation: 提供一种用于制造有源器件阵列衬底的方法。 首先，提供具有显示区域和感测区域的基板。 然后，在基板的显示区域上形成第一图案化导体层。 在基板上形成栅极绝缘体。 图案化的半导体层，第二图案化导体层和图案化的光敏介电层形成在栅极绝缘体上，其中第二图案化导体层包括源电极，漏电极和下电极，图案化的感光介电层覆盖第二 图案化导体层包括设置在源电极和漏电极上的界面保护层和设置在下电极上的感光层。 然后在衬底上形成钝化层。 之后，在钝化层上形成包括像素电极和上电极的第三图案化导体层。

公开(公告)号：US07745243B2

公开(公告)日：2010-06-29

申请号：US12416934

申请日：2009-04-02

Applicant: Yu-Cheng Chen ,  Chen-Yueh Li ,  Ching-Sang Chuang ,  Kun-Chih Lin

Inventor： Yu-Cheng Chen ,  Chen-Yueh Li ,  Ching-Sang Chuang ,  Kun-Chih Lin

IPC: H01L21/8232

CPC classification number: G02F1/133555 ,  G02F2001/136231

Abstract: A forming method of the present invention includes forming a first patterned conductive layer, which includes a transparent conductive layer and a metal layer stacked together on a substrate, where the first patterned conductive layer functions as gate lines, gate electrodes, common lines and predetermined transparent pixel electrode structures; and forming a second patterned conductive layer on the substrate. The second patterned conductive layer includes data lines and reflective pixel electrodes, and be directly connected to doping regions, such as source regions/drain regions. According to the forming method of the present invention, pixel structures of a transflective liquid crystal display device can be formed through five mask processes. Therefore, the manufacturing process of the transflective liquid crystal display device is effectively simplified, so the product yield is improved and the cost can be reduced.

Abstract translation: 本发明的形成方法包括形成第一图案化导电层，其包括在基板上堆叠在一起的透明导电层和金属层，其中第一图案化导电层用作栅极线，栅电极，共同线和预定透明 像素电极结构; 以及在所述衬底上形成第二图案化导电层。 第二图案化导电层包括数据线和反射像素电极，并且直接连接到诸如源极区/漏极区的掺杂区。 根据本发明的形成方法，可以通过五个掩模工艺形成半透射型液晶显示装置的像素结构。 因此，有效地简化了半透射型液晶显示装置的制造工艺，从而提高了产品成品率，降低了成本。

公开(公告)号：US08597968B2

公开(公告)日：2013-12-03

申请号：US13353328

申请日：2012-01-19

Applicant: Yu-Cheng Chen ,  Chen-Yueh Li ,  Ching-Sang Chuang ,  Ching-Chieh Shih ,  An-Thung Cho

Inventor： Yu-Cheng Chen ,  Chen-Yueh Li ,  Ching-Sang Chuang ,  Ching-Chieh Shih ,  An-Thung Cho

IPC: H01L21/00

CPC classification number: H01L27/1288 ,  H01L27/1214

Abstract: An active device array substrate is provided. First, a substrate having a display area and a sensing area is provided. Then, a first patterned conductor layer is disposed on the display area of the substrate. A gate insulator is disposed on the substrate. A patterned semiconductor layer, a second patterned conductor layer and a patterned photosensitive dielectric layer are disposed on the gate insulator, wherein the second patterned conductor layer includes a source electrode, a drain electrode and a lower electrode, the patterned photosensitive dielectric layer covering the second patterned conductor layer includes an interface protection layer disposed on the source electrode and the drain electrode and a photo-sensing layer disposed on the lower electrode. A passivation layer is then disposed on the substrate. After that, a third patterned conductor layer including a pixel electrode and an upper electrode is disposed on the passivation layer.

Abstract translation: 提供有源器件阵列衬底。 首先，提供具有显示区域和感测区域的基板。 然后，在基板的显示区域上设置第一图案化导体层。 栅极绝缘体设置在基板上。 图案化半导体层，第二图案化导体层和图案化感光介电层设置在栅极绝缘体上，其中第二图案化导体层包括源电极，漏电极和下电极，图案化的感光介电层覆盖第二 图案化导体层包括设置在源电极和漏电极上的界面保护层和设置在下电极上的感光层。 然后在衬底上设置钝化层。 之后，在钝化层上设置包括像素电极和上部电极的第三图案化导体层。

公开(公告)号：US08148185B2

公开(公告)日：2012-04-03

申请号：US12559506

申请日：2009-09-15

Applicant: Yu-Cheng Chen ,  Chen-Yueh Li ,  Ching-Sang Chuang ,  Ching-Chieh Shih ,  An-Thung Cho

Inventor： Yu-Cheng Chen ,  Chen-Yueh Li ,  Ching-Sang Chuang ,  Ching-Chieh Shih ,  An-Thung Cho

IPC: H01L21/00

CPC classification number: H01L27/1288 ,  H01L27/1214

Abstract: A method for fabricating an active device array substrate is provided. First, a substrate having a display area and a sensing area is provided. Then, a first patterned conductor layer is formed on the display area of the substrate. A gate insulator is formed on the substrate. A patterned semiconductor layer, a second patterned conductor layer and a patterned photosensitive dielectric layer are formed on the gate insulator, wherein the second patterned conductor layer includes a source electrode, a drain electrode and a lower electrode, the patterned photosensitive dielectric layer covering the second patterned conductor layer includes an interface protection layer disposed on the source electrode and the drain electrode and a photo-sensing layer disposed on the lower electrode. A passivation layer is then formed on the substrate. After that, a third patterned conductor layer including a pixel electrode and an upper electrode is formed on the passivation layer.

Abstract translation: 提供一种用于制造有源器件阵列衬底的方法。 首先，提供具有显示区域和感测区域的基板。 然后，在基板的显示区域上形成第一图案化导体层。 在基板上形成栅极绝缘体。 图案化的半导体层，第二图案化导体层和图案化的光敏介电层形成在栅极绝缘体上，其中第二图案化导体层包括源电极，漏电极和下电极，图案化的感光介电层覆盖第二 图案化导体层包括设置在源电极和漏电极上的界面保护层和设置在下电极上的感光层。 然后在衬底上形成钝化层。 之后，在钝化层上形成包括像素电极和上电极的第三图案化导体层。

公开(公告)号：US20100112737A1

公开(公告)日：2010-05-06

申请号：US12416934

申请日：2009-04-02

Applicant: Yu-Cheng Chen ,  Chen-Yueh Li ,  Ching-Sang Chuang ,  Kun-Chih Lin

Inventor： Yu-Cheng Chen ,  Chen-Yueh Li ,  Ching-Sang Chuang ,  Kun-Chih Lin

IPC: H01L21/3115

CPC classification number: G02F1/133555 ,  G02F2001/136231

Abstract: A forming method of the present invention includes forming a first patterned conductive layer, which includes a transparent conductive layer and a metal layer stacked together on a substrate, where the first patterned conductive layer functions as gate lines, gate electrodes, common lines and predetermined transparent pixel electrode structures; and forming a second patterned conductive layer on the substrate. The second patterned conductive layer includes data lines and reflective pixel electrodes, and be directly connected to doping regions, such as source regions/drain regions. According to the forming method of the present invention, pixel structures of a transflective liquid crystal display device can be formed through five mask processes. Therefore, the manufacturing process of the transflective liquid crystal display device is effectively simplified, so the product yield is improved and the cost can be reduced.

Abstract translation: 本发明的形成方法包括形成第一图案化导电层，其包括在基板上堆叠在一起的透明导电层和金属层，其中第一图案化导电层用作栅极线，栅电极，共同线和预定透明 像素电极结构; 以及在所述衬底上形成第二图案化导电层。 第二图案化导电层包括数据线和反射像素电极，并且直接连接到诸如源极区/漏极区的掺杂区。 根据本发明的形成方法，可以通过五个掩模工艺形成半透射型液晶显示装置的像素结构。 因此，有效地简化了半透射型液晶显示装置的制造工艺，从而提高了产品成品率，降低了成本。

公开(公告)号：US20050250050A1

公开(公告)日：2005-11-10

申请号：US10650977

申请日：2003-08-29

Applicant: Chih-Chiang Chen ,  Ching-Sang Chuang ,  Jiun-Jye Chang

Inventor： Chih-Chiang Chen ,  Ching-Sang Chuang ,  Jiun-Jye Chang

IPC: H01L21/027 ,  G03F7/00 ,  H01L21/336 ,  H01L29/786

CPC classification number: H01L29/66757 ,  H01L29/78621

Abstract: A method of forming a top gate thin film transistor (TFT). By performing photolithography using a first reticle, a photoresist layer having a thick photoresist layer portion and a thin photoresist layer portion is formed on a silicon layer in an active area. Thus, a channel layer and source/drain regions in a silicon island are defined by the same patterning process. In addition, a gate and an LDD region in the silicon island are defined by photolithography using a second reticle and a backside exposure process. Accordingly, the top gate TFT fabrication process of the present invention requires only two reticles, and thereby reduces costs.

Abstract translation: 一种形成顶栅极薄膜晶体管（TFT）的方法。 通过使用第一掩模版进行光刻，在活性区域的硅层上形成具有厚的光致抗蚀剂层部分和光致抗蚀剂层部分的光致抗蚀剂层。 因此，通过相同的图案化工艺限定硅岛中的沟道层和源/漏区。 此外，硅岛中的栅极和LDD区域通过使用第二掩模版和背面曝光工艺的光刻来定义。 因此，本发明的顶栅TFT制造方法仅需要两个掩模版，从而降低成本。