发明授权
- 专利标题： Surface patterned topography feature suitable for planarization
- 专利标题（中）： 表面图案形貌特征适用于平坦化
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申请号： US11696829申请日： 2007-04-05
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公开(公告)号： US08148228B2公开(公告)日： 2012-04-03
- 发明人: Sameer Pendharkar , Binghua Hu , Xinfen Celia Chen
- 申请人： Sameer Pendharkar , Binghua Hu , Xinfen Celia Chen
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 John J. Patti; Wade J. Brady, III; Frederick J. Telecky, Jr
- 主分类号： H01L21/8228
- IPC分类号： H01L21/8228
摘要：
A method for manufacturing a semiconductor device that comprises implanting a first dopant type in a well region of a substrate to form implanted sub-regions that are separated by non-implanted areas of the well region. The method also comprises forming an oxide layer over the well region, such that an oxide-converted first thickness of the implanted sub-regions is greater than an oxide-converted second thickness of the non-implanted areas. The method further comprises removing the oxide layer to form a topography feature on the well region. The topography feature comprises a surface pattern of higher and lower portions. The higher portions correspond to locations of the non-implanted areas and the lower portions correspond to the implanted sub-regions.
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