Invention Grant
US08148711B2 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using nonvolatile memory element
有权
非易失性存储元件及其制造方法以及使用非易失性存储元件的非易失性半导体装置
- Patent Title: Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using nonvolatile memory element
- Patent Title (中): 非易失性存储元件及其制造方法以及使用非易失性存储元件的非易失性半导体装置
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Application No.: US12600793Application Date: 2008-05-16
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Publication No.: US08148711B2Publication Date: 2012-04-03
- Inventor: Satoru Fujii , Yoshihiko Kanzawa , Takeshi Takagi , Kazuhiko Shimakawa
- Applicant: Satoru Fujii , Yoshihiko Kanzawa , Takeshi Takagi , Kazuhiko Shimakawa
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2007-132893 20070518
- International Application: PCT/JP2008/001230 WO 20080516
- International Announcement: WO2008/146461 WO 20081204
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
A nonvolatile semiconductor apparatus of the present invention comprises (103), a second electrode (105), and a resistance variable layer (104) disposed between the first electrode (103) and the second electrode (105), a resistance value of the resistance variable layer being switchable reversibly in response to an electric signal applied between the electrodes (103), (105), wherein the resistance variable layer (104) comprises an oxide containing tantalum and nitrogen.
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