Invention Grant
US08148751B2 Group III nitride semiconductor wafer and group III nitride semiconductor device
有权
III族氮化物半导体晶片和III族氮化物半导体器件
- Patent Title: Group III nitride semiconductor wafer and group III nitride semiconductor device
- Patent Title (中): III族氮化物半导体晶片和III族氮化物半导体器件
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Application No.: US12732775Application Date: 2010-03-26
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Publication No.: US08148751B2Publication Date: 2012-04-03
- Inventor: Shin Hashimoto , Tatsuya Tanabe , Katsushi Akita , Hideaki Nakahata , Hiroshi Amano
- Applicant: Shin Hashimoto , Tatsuya Tanabe , Katsushi Akita , Hideaki Nakahata , Hiroshi Amano
- Applicant Address: JP Osaka-shi
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi
- Agency: Venable LLP
- Agent Michael A. Sartori
- Priority: JPP2009-198701 20090828
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A group III nitride semiconductor device and a group III nitride semiconductor wafer are provided. The group III nitride semiconductor device has a channel layer comprising group III nitride-based semiconductor containing Al. The group III nitride semiconductor device can enhance the mobility of the two-dimensional electron gas and improve current characteristics. The group III nitride semiconductor wafer is used to make the group III nitride semiconductor device. The group III nitride semiconductor wafer comprises a substrate made of AlXGa1-XN (0
Public/Granted literature
- US20110049573A1 GROUP III NITRIDE SEMICONDUCTOR WAFER AND GROUP III NITRIDE SEMICONDUCTOR DEVICE Public/Granted day:2011-03-03
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