发明授权
- 专利标题： Nonvolatile semiconductor memory device and method of manufacturing the same
- 专利标题（中）： 非易失性半导体存储器件及其制造方法
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申请号： US12534576申请日： 2009-08-03
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公开(公告)号： US08148769B2公开(公告)日： 2012-04-03
- 发明人: Masaru Kito , Yoshiaki Fukuzumi , Ryota Katsumata , Masaru Kidoh , Hiroyasu Tanaka , Megumi Ishiduki , Yosuke Komori , Hideaki Aochi
- 申请人： Masaru Kito , Yoshiaki Fukuzumi , Ryota Katsumata , Masaru Kidoh , Hiroyasu Tanaka , Megumi Ishiduki , Yosuke Komori , Hideaki Aochi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2008-245070 20080925
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A nonvolatile semiconductor memory device includes a plurality of memory strings, each of which has a plurality of electrically rewritable memory cells connected in series; and select transistors, one of which is connected to each of ends of each of the memory strings. Each of the memory strings is provided with a first semiconductor layer having a pair of columnar portions extending in a perpendicular direction with respect to a substrate, and a joining portion formed so as to join lower ends of the pair of columnar portions; a charge storage layer formed so as to surround a side surface of the columnar portions; and a first conductive layer formed so as to surround the side surface of the columnar portions and the charge storage layer, and configured to function as a control electrode of the memory cells. Each of the select transistors is provided with a second semiconductor layer extending upwardly from an upper surface of the columnar portions; and a second conductive layer formed so as to surround a side surface of the second semiconductor layer with a gap interposed, and configured to function as a control electrode of the select transistors.
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