Invention Grant
- Patent Title: Complementary metal-oxide semiconductor (CMOS) image sensor
- Patent Title (中): 互补金属氧化物半导体(CMOS)图像传感器
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Application No.: US11321557Application Date: 2005-12-28
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Publication No.: US08149311B2Publication Date: 2012-04-03
- Inventor: Seong-Han Yu
- Applicant: Seong-Han Yu
- Applicant Address: US DE Wilmington
- Assignee: Intellectual Ventures II LLC
- Current Assignee: Intellectual Ventures II LLC
- Current Assignee Address: US DE Wilmington
- Agency: McAndrews, Held & Malloy Ltd.
- Priority: KR10-2004-0115887 20041230
- Main IPC: H04N5/335
- IPC: H04N5/335 ; H04N5/225 ; H01L31/062 ; H01L27/00

Abstract:
A CMOS image sensor includes a unit pixel including controlled by a high voltage; a reference high voltage generator for generating a reference high voltage; and a high voltage output unit for generating the high voltage by using the reference high voltage as an operating voltage to thereby output the high voltage to the unit pixel, wherein a level of the high voltage is stably maintained regardless of a variations of the reference high voltage level.
Public/Granted literature
- US20070146517A1 CMOS image sensor Public/Granted day:2007-06-28
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