Complementary metal-oxide semiconductor (CMOS) image sensor
    2.
    发明授权
    Complementary metal-oxide semiconductor (CMOS) image sensor 有权
    互补金属氧化物半导体(CMOS)图像传感器

    公开(公告)号:US08149311B2

    公开(公告)日:2012-04-03

    申请号:US11321557

    申请日:2005-12-28

    Applicant: Seong-Han Yu

    Inventor: Seong-Han Yu

    CPC classification number: H04N5/3745 H04N5/355 H04N5/3698 H04N5/374

    Abstract: A CMOS image sensor includes a unit pixel including controlled by a high voltage; a reference high voltage generator for generating a reference high voltage; and a high voltage output unit for generating the high voltage by using the reference high voltage as an operating voltage to thereby output the high voltage to the unit pixel, wherein a level of the high voltage is stably maintained regardless of a variations of the reference high voltage level.

    Abstract translation: CMOS图像传感器包括由高电压控制的单位像素; 用于产生参考高电压的参考高压发生器; 以及高电压输出单元,用于通过使用参考高电压作为工作电压产生高电压,从而将高电压输出到单位像素,其中高电压的电平被稳定地保持,而与参考高度的变化无关 电压电平。

    COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR (CMOS) IMAGE SENSOR
    3.
    发明申请
    COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR (CMOS) IMAGE SENSOR 有权
    补充金属氧化物半导体(CMOS)图像传感器

    公开(公告)号:US20100194957A1

    公开(公告)日:2010-08-05

    申请号:US12764727

    申请日:2010-04-21

    Applicant: Seong-Han Yu

    Inventor: Seong-Han Yu

    CPC classification number: H04N5/3745 H04N5/355 H04N5/3698 H04N5/374

    Abstract: A CMOS image sensor includes a unit pixel including controlled by a high voltage; a reference high voltage generator for generating a reference high voltage; and a high voltage output unit for generating the high voltage by using the reference high voltage as an operating voltage to thereby output the high voltage to the unit pixel, wherein a level of the high voltage is stably maintained regardless of a variations of the reference high voltage level.

    Abstract translation: CMOS图像传感器包括由高电压控制的单位像素; 用于产生参考高电压的参考高压发生器; 以及高电压输出单元,用于通过使用参考高电压作为工作电压产生高电压,从而将高电压输出到单位像素,其中高电压的电平被稳定地保持,而与参考高度的变化无关 电压电平。

    CMOS image sensor
    4.
    发明申请
    CMOS image sensor 有权
    CMOS图像传感器

    公开(公告)号:US20070146517A1

    公开(公告)日:2007-06-28

    申请号:US11321557

    申请日:2005-12-28

    Applicant: Seong-Han Yu

    Inventor: Seong-Han Yu

    CPC classification number: H04N5/3745 H04N5/355 H04N5/3698 H04N5/374

    Abstract: A CMOS image sensor includes a unit pixel including controlled by a high voltage; a reference high voltage generator for generating a reference high voltage; and a high voltage output unit for generating the high voltage by using the reference high voltage as an operating voltage to thereby output the high voltage to the unit pixel, wherein a level of the high voltage is stably maintained regardless of a variations of the reference high voltage level.

    Abstract translation: CMOS图像传感器包括由高电压控制的单位像素; 用于产生参考高电压的参考高压发生器; 以及高电压输出单元,用于通过使用参考高电压作为工作电压产生高电压,从而将高电压输出到单位像素,其中高电压的电平被稳定地保持,而与参考高度的变化无关 电压电平。

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