发明授权
- 专利标题: Multiple access type memory and method of operation
- 专利标题(中): 多路访问类型的存储器和操作方法
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申请号: US12692125申请日: 2010-01-22
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公开(公告)号: US08151075B2公开(公告)日: 2012-04-03
- 发明人: Timothy J. Strauss , David W. Chrudimsky , William C. Moyer
- 申请人: Timothy J. Strauss , David W. Chrudimsky , William C. Moyer
- 申请人地址: US TX Austin
- 专利权人: Freescale Semiconductor, Inc.
- 当前专利权人: Freescale Semiconductor, Inc.
- 当前专利权人地址: US TX Austin
- 代理商 Rob King; Charles Bergere
- 主分类号: G06F12/00
- IPC分类号: G06F12/00
摘要:
A method for accessing a memory includes receiving a first address wherein the first address corresponds to a demand fetch, receiving a second address wherein the second address corresponds to a speculative prefetch, providing first data from the memory in response to the demand fetch in which the first data is accessed asynchronous to a system clock, and providing second data from the memory in response to the speculative prefetch in which the second data is accessed synchronous to the system clock. The memory may include a plurality of pipeline stages in which providing the first data in response to the demand fetch is performed such that each pipeline stage is self-timed independent of the system clock and providing the second data in response to the speculative prefetch is performed such that each pipeline stage is timed based on the system clock to be synchronous with the system clock.
公开/授权文献
- US20110185146A1 MULTIPLE ACCESS TYPE MEMORY AND METHOD OF OPERATION 公开/授权日:2011-07-28
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