Invention Grant
- Patent Title: AG-based alloy sputtering target
- Patent Title (中): AG型合金溅射靶
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Application No.: US12198520Application Date: 2008-08-26
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Publication No.: US08152976B2Publication Date: 2012-04-10
- Inventor: Yuki Tauchi , Hitoshi Matsuzaki , Naoki Okawa
- Applicant: Yuki Tauchi , Hitoshi Matsuzaki , Naoki Okawa
- Applicant Address: JP Kobe-shi JP Tokyo
- Assignee: Kobelco Research Institute, Inc.,Sony Disc & Digital Solutions Inc.
- Current Assignee: Kobelco Research Institute, Inc.,Sony Disc & Digital Solutions Inc.
- Current Assignee Address: JP Kobe-shi JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-222539 20070829
- Main IPC: C23C14/00
- IPC: C23C14/00

Abstract:
The invention relates to an Ag-based alloy sputtering target including at least one element selected from the group consisting of Ti, V, W, Nb, Zr, Ta, Cr, Mo, Mn, Fe, Co, Ni, Cu, Al, and Si in a total amount of 1 to 15% by weight, in which the Ag-based alloy sputtering target has an arithmetic mean roughness (Ra) of 2 μm or more and a maximum height (Rz) of 20 μm or more at a sputtering surface thereof.
Public/Granted literature
- US20090057141A1 AG-BASED ALLOY SPUTTERING TARGET Public/Granted day:2009-03-05
Information query
IPC分类: