发明授权
- 专利标题： Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride
- 专利标题（中）： 含硅膜，例如硅，氮化硅，二氧化硅和/或硅氧氮化物的薄膜的低温沉积的组成和方法
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申请号： US13069217申请日： 2011-03-22
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公开(公告)号： US08153833B2公开(公告)日： 2012-04-10
- 发明人: Ziyun Wang , Chongying Xu , Ravi K. Laxman , Thomas H. Baum , Bryan C. Hendrix , Jeffrey F. Roeder
- 申请人： Ziyun Wang , Chongying Xu , Ravi K. Laxman , Thomas H. Baum , Bryan C. Hendrix , Jeffrey F. Roeder
- 申请人地址： US CT Danbury
- 专利权人： Advanced Technology Materials, Inc.
- 当前专利权人： Advanced Technology Materials, Inc.
- 当前专利权人地址： US CT Danbury
- 代理机构： Hultquist, PLLC
- 代理商 Mary B. Grant; Margaret Chappuis
- 主分类号： C07C7/10
- IPC分类号： C07C7/10
摘要：
Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g.,
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