发明授权
- 专利标题： Integrated diode in a silicon chip scale package
- 专利标题（中）： 集成二极管在硅芯片级封装
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申请号： US11118179申请日： 2005-04-29
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公开(公告)号： US08154030B2公开(公告)日： 2012-04-10
- 发明人: James K. Guenter
- 申请人： James K. Guenter
- 申请人地址： US CA Sunnyvale
- 专利权人： Finisar Corporation
- 当前专利权人： Finisar Corporation
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Maschoff Gilmore & Israelsen
- 主分类号： H01L31/153
- IPC分类号： H01L31/153
摘要：
An optical component with integrated back monitor photodiode. The optical component includes a substrate doped with a first type dopant, such as an n-type dopant. The substrate has a trench with sloped walls. An optical source is disposed in the trench. An implant of a second type dopant, such as a p-type dopant, is in the substrate around at a least a portion of the optical source. The implant in the substrate in combination with the first type dopant in the substrate forms a diode.
公开/授权文献
- US20060071229A1 Integrated diode in a silicon chip scale package 公开/授权日：2006-04-06