发明授权
US08154090B2 Non-volatile two-transistor semiconductor memory cell and method for producing the same 有权
非挥发性双晶体管半导体存储单元及其制造方法

  • 专利标题: Non-volatile two-transistor semiconductor memory cell and method for producing the same
  • 专利标题(中): 非挥发性双晶体管半导体存储单元及其制造方法
  • 申请号: US12079003
    申请日: 2008-03-24
  • 公开(公告)号: US08154090B2
    公开(公告)日: 2012-04-10
  • 发明人: Franz SchulerGeorg Tempel
  • 申请人: Franz SchulerGeorg Tempel
  • 申请人地址: DE Neubiberg
  • 专利权人: Infineon Technologies AG
  • 当前专利权人: Infineon Technologies AG
  • 当前专利权人地址: DE Neubiberg
  • 优先权: DE10201304 20020115
  • 主分类号: H01L29/76
  • IPC分类号: H01L29/76
Non-volatile two-transistor semiconductor memory cell and method for producing the same
摘要:
The invention relates to a nonvolatile semiconductor memory cell and to an associated fabrication method, a source region (7), a drain region (8) and a channel region lying in between being formed in a substrate (1). In order to realize locally delimited memory locations (LB, RB), an electrically non-conductive charge storage layer (3) situated on a first insulation layer (2) is divided by an interruption (U), thereby preventing, in particular, a lateral charge transport between the memory locations (LB, RB) and significantly improving the charge retention properties.
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