Invention Grant
- Patent Title: SN containing hole blocking layer photoconductor
- Patent Title (中): SN含有空穴阻挡层光电导体
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Application No.: US12511139Application Date: 2009-07-29
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Publication No.: US08158315B2Publication Date: 2012-04-17
- Inventor: Jin Wu
- Applicant: Jin Wu
- Applicant Address: US CT Norwalk
- Assignee: Xerox Corporation
- Current Assignee: Xerox Corporation
- Current Assignee Address: US CT Norwalk
- Agency: Oliff & Berridge, PLC
- Main IPC: G03G5/14
- IPC: G03G5/14
Abstract:
A photoconductor that includes a supporting substrate, a hole blocking layer, a ground plane layer, a photogenerating layer, and at least one charge transport layer, and where the hole blocking layer includes a SN containing compound and an aminosilane.
Public/Granted literature
- US20110027707A1 SN CONTAINING HOLE BLOCKING LAYER PHOTOCONDUCTOR Public/Granted day:2011-02-03
Information query
