Invention Grant
- Patent Title: Thin film transistor substrate and method of manufacturing thereof
- Patent Title (中): 薄膜晶体管基板及其制造方法
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Application No.: US13018309Application Date: 2011-01-31
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Publication No.: US08158470B2Publication Date: 2012-04-17
- Inventor: Jong Hyun Choung , Hong Sick Park , Sun Young Hong , Bong Kyun Kim , Bong Kyu Shin , Won Suk Shin , Byeong Jin Lee
- Applicant: Jong Hyun Choung , Hong Sick Park , Sun Young Hong , Bong Kyun Kim , Bong Kyu Shin , Won Suk Shin , Byeong Jin Lee
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: KR10-2006-0050544 20060605
- Main IPC: H01L21/336
- IPC: H01L21/336

Abstract:
A thin film transistor substrate and a method of manufacturing the thin film transistor substrate comprises forming a gate line and a data line intersecting each other with a gate insulating layer interposed and defining a pixel area on the substrate, a thin film transistor electrically connected to the gate line and the data line, and a stepped-structure occurring pattern overlapping at least one of the gate line and the data line; forming a passivation layer having a stepped-structure portion formed by the stepped-structure occurring pattern on the substrate; forming a photoresist pattern having a second stepped-structure portion corresponding to the stepped-structure portion on the passivation layer; patterning the passivation layer using the photoresist pattern as a mask; forming a transparent conductive layer on the substrate; and removing the photoresist pattern where the transparent conductive layer is covered by a stripper penetrating through the stepped-structure portion of the photoresist pattern and forming a pixel electrode connected to the thin film transistor.
Public/Granted literature
- US20110151631A1 THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THEREOF Public/Granted day:2011-06-23
Information query
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