Thin film transistor substrate and method of manufacturing thereof
    1.
    发明授权
    Thin film transistor substrate and method of manufacturing thereof 失效
    薄膜晶体管基板及其制造方法

    公开(公告)号:US08158470B2

    公开(公告)日:2012-04-17

    申请号:US13018309

    申请日:2011-01-31

    IPC分类号: H01L21/336

    摘要: A thin film transistor substrate and a method of manufacturing the thin film transistor substrate comprises forming a gate line and a data line intersecting each other with a gate insulating layer interposed and defining a pixel area on the substrate, a thin film transistor electrically connected to the gate line and the data line, and a stepped-structure occurring pattern overlapping at least one of the gate line and the data line; forming a passivation layer having a stepped-structure portion formed by the stepped-structure occurring pattern on the substrate; forming a photoresist pattern having a second stepped-structure portion corresponding to the stepped-structure portion on the passivation layer; patterning the passivation layer using the photoresist pattern as a mask; forming a transparent conductive layer on the substrate; and removing the photoresist pattern where the transparent conductive layer is covered by a stripper penetrating through the stepped-structure portion of the photoresist pattern and forming a pixel electrode connected to the thin film transistor.

    摘要翻译: 薄膜晶体管基板和制造薄膜晶体管基板的方法包括:形成栅极线和数据线,其中栅极绝缘层相互插入并限定基板上的像素区域,薄膜晶体管电连接到 栅极线和数据线,以及与栅极线和数据线中的至少一个重叠的阶梯结构发生图案; 在所述基板上形成具有由阶梯状结构发生图案形成的台阶状部分的钝化层; 形成具有对应于所述钝化层上的阶梯状结构部分的第二阶梯结构部分的光致抗蚀剂图案; 使用光致抗蚀剂图案作为掩模来图案化钝化层; 在所述基板上形成透明导电层; 以及去除透明导电层被穿透光致抗蚀剂图案的台阶结构部分的剥离剂覆盖的光致抗蚀剂图案,并形成连接到薄膜晶体管的像素电极。

    Thin film transistor substrate and method of manufacturing thereof
    2.
    发明授权
    Thin film transistor substrate and method of manufacturing thereof 有权
    薄膜晶体管基板及其制造方法

    公开(公告)号:US07901965B2

    公开(公告)日:2011-03-08

    申请号:US11706012

    申请日:2007-02-12

    IPC分类号: H01L21/00

    摘要: A thin film transistor substrate and a method of manufacturing the thin film transistor substrate comprises forming a gate line and a data line intersecting each other with a gate insulating layer interposed and defining a pixel area on the substrate, a thin film transistor electrically connected to the gate line and the data line, and a stepped-structure occurring pattern overlapping at least one of the gate line and the data line; forming a passivation layer having a stepped-structure portion formed by the stepped-structure occurring pattern on the substrate; forming a photoresist pattern having a second stepped-structure portion corresponding to the stepped-structure portion on the passivation layer; patterning the passivation layer using the photoresist pattern as a mask; forming a transparent conductive layer on the substrate; and removing the photoresist pattern where the transparent conductive layer is covered by a stripper penetrating through the stepped-structure portion of the photoresist pattern and forming a pixel electrode connected to the thin film transistor.

    摘要翻译: 薄膜晶体管基板和制造薄膜晶体管基板的方法包括:形成栅极线和数据线,该栅极线和数据线被插入并且限定基板上的像素区域的栅极绝缘层彼此相交;薄膜晶体管,电连接到 栅极线和数据线,以及与栅极线和数据线中的至少一个重叠的阶梯结构发生图案; 在所述基板上形成具有由阶梯状结构发生图案形成的台阶状部分的钝化层; 形成具有对应于所述钝化层上的阶梯状结构部分的第二阶梯结构部分的光致抗蚀剂图案; 使用光致抗蚀剂图案作为掩模来图案化钝化层; 在所述基板上形成透明导电层; 以及去除透明导电层被穿透光致抗蚀剂图案的台阶结构部分的剥离剂覆盖的光致抗蚀剂图案,并形成连接到薄膜晶体管的像素电极。

    Thin film transistor substrate and method of manufacturing thereof
    3.
    发明申请
    Thin film transistor substrate and method of manufacturing thereof 有权
    薄膜晶体管基板及其制造方法

    公开(公告)号:US20070278487A1

    公开(公告)日:2007-12-06

    申请号:US11706012

    申请日:2007-02-12

    IPC分类号: H01L33/00

    摘要: A thin film transistor substrate and a method of manufacturing the thin film transistor substrate comprises forming a gate line and a data line intersecting each other with a gate insulating layer interposed and defining a pixel area on the substrate, a thin film transistor electrically connected to the gate line and the data line, and a stepped-structure occurring pattern overlapping at least one of the gate line and the data line; forming a passivation layer having a stepped-structure portion formed by the stepped-structure occurring pattern on the substrate; forming a photoresist pattern having a second stepped-structure portion corresponding to the stepped-structure portion on the passivation layer; patterning the passivation layer using the photoresist pattern as a mask; forming a transparent conductive layer on the substrate; and removing the photoresist pattern where the transparent conductive layer is covered by a stripper penetrating through the stepped-structure portion of the photoresist pattern and forming a pixel electrode connected to the thin film transistor.

    摘要翻译: 薄膜晶体管基板和薄膜晶体管基板的制造方法包括形成栅极线和数据线,该栅极线和数据线被插入并且限定基板上的像素区域的栅极绝缘层彼此相交,薄膜晶体管电连接到 栅极线和数据线,以及与栅极线和数据线中的至少一个重叠的阶梯结构发生图案; 在所述基板上形成具有由阶梯状结构发生图案形成的台阶状部分的钝化层; 形成具有对应于所述钝化层上的阶梯状结构部分的第二阶梯结构部分的光致抗蚀剂图案; 使用光致抗蚀剂图案作为掩模来图案化钝化层; 在所述基板上形成透明导电层; 以及去除透明导电层被穿透光致抗蚀剂图案的台阶结构部分的剥离剂覆盖的光致抗蚀剂图案,并形成连接到薄膜晶体管的像素电极。

    CONDUCTIVE POLYMER CONTAINING CARBAZOLE, AND ORGANIC PHOTOVOLTAIC DEVICE USING SAME
    5.
    发明申请
    CONDUCTIVE POLYMER CONTAINING CARBAZOLE, AND ORGANIC PHOTOVOLTAIC DEVICE USING SAME 有权
    含有CARBAZOLE的导电性聚合物和使用相同的有机光伏器件

    公开(公告)号:US20120018715A1

    公开(公告)日:2012-01-26

    申请号:US13259867

    申请日:2010-03-31

    摘要: The present invention relates to a 2,7-carbazole-containing polymer represented by formula 1 and an organic photovoltaic device comprising the conductive polymer as a photoelectric conversion material. The conductive polymer has high photon absorption efficiency and improved hole mobility and is prepared by introducing a specific amount of a carbazole compound either into a polymer, consisting only of a donor functional group containing one or more aromatic monomers, or into a donor-acceptor type polymer comprising a repeating acceptor group introduced into a donor functional group. The conductive polymer can be used as a photoelectric conversion material for organic thin film transistors (OTFTs) or organic light-emitting diodes (OLEDs). Furthermore, the invention provides an organic photovoltaic device comprising the carbazole-containing conductive polymer as an electron donor, and thus can achieve high photoelectric conversion efficiency in organic thin film solar cells.

    摘要翻译: 本发明涉及由式1表示的2,7-咔唑聚合物和包含导电聚合物作为光电转换材料的有机光伏器件。 导电聚合物具有高的光子吸收效率和改善的空穴迁移率,并且通过将特定量的咔唑化合物引入仅由含有一个或多个芳族单体的供体官能团组成的聚合物中,或者进入供体 - 受体型 包含引入供体官能团的重复受体基团的聚合物。 导电聚合物可以用作有机薄膜晶体管(OTFT)或有机发光二极管(OLED)的光电转换材料。 此外,本发明提供一种包含含咔唑的导电聚合物作为电子给体的有机光伏器件,因此可以在有机薄膜太阳能电池中实现高的光电转换效率。

    Organic semiconductor compound, method for preparing same, and organic semiconductor device employing same
    7.
    发明授权
    Organic semiconductor compound, method for preparing same, and organic semiconductor device employing same 有权
    有机半导体化合物,其制备方法和使用其的有机半导体器件

    公开(公告)号:US09236573B2

    公开(公告)日:2016-01-12

    申请号:US14114065

    申请日:2012-04-26

    IPC分类号: H01L51/00 C07D495/04

    摘要: Provided are an organic semiconductor compound, a method for preparing same, a polymer compound having the organic semiconductor compound of the present invention as a monomer, and an organic semiconductor device containing the polymer compound. Said organic semiconductor compound has side chains in the chemical structure thereof, and is highly soluble in a solvent, and therefore the organic semiconductor compound can be effectively used in solution-based processes. The organic semiconductor device containing the polymer compound according to the present invention yields high manufacturing efficiency.

    摘要翻译: 提供有机半导体化合物,其制备方法,具有本发明的有机半导体化合物作为单体的高分子化合物和含有高分子化合物的有机半导体器件。 所述有机半导体化合物在其化学结构中具有侧链,并且在溶剂中高度可溶,因此有机半导体化合物可以有效地用于基于溶液的方法。 含有本发明的高分子化合物的有机半导体装置的制造效率高。

    ORGANIC SEMICONDUCTOR COMPOUND, METHOD FOR PREPARING SAME, AND ORGANIC SEMICONDUCTOR DEVICE EMPLOYING SAME
    8.
    发明申请
    ORGANIC SEMICONDUCTOR COMPOUND, METHOD FOR PREPARING SAME, AND ORGANIC SEMICONDUCTOR DEVICE EMPLOYING SAME 有权
    有机半导体化合物,其制备方法和使用其的有机半导体器件

    公开(公告)号:US20140046013A1

    公开(公告)日:2014-02-13

    申请号:US14114065

    申请日:2012-04-26

    IPC分类号: H01L51/00

    摘要: Provided are an organic semiconductor compound, a method for preparing same, a polymer compound having the organic semiconductor compound of the present invention as a monomer, and an organic semiconductor device containing the polymer compound. Said organic semiconductor compound has side chains in the chemical structure thereof, and is highly soluble in a solvent, and therefore the organic semiconductor compound can be effectively used in solution-based processes. The organic semiconductor device containing the polymer compound according to the present invention yields high manufacturing efficiency

    摘要翻译: 提供有机半导体化合物,其制备方法,具有本发明的有机半导体化合物作为单体的高分子化合物和含有高分子化合物的有机半导体器件。 所述有机半导体化合物在其化学结构中具有侧链,并且在溶剂中高度可溶,因此有机半导体化合物可以有效地用于基于溶液的方法。 含有本发明的高分子化合物的有机半导体装置的制造效率高

    Conductive polymer containing carbazole, and organic photovoltaic device using same
    10.
    发明授权
    Conductive polymer containing carbazole, and organic photovoltaic device using same 有权
    含有咔唑的导电聚合物和使用其的有机光伏器件

    公开(公告)号:US08519068B2

    公开(公告)日:2013-08-27

    申请号:US13259867

    申请日:2010-03-31

    摘要: The present invention relates to a 2,7-carbazole-containing polymer represented by formula 1 and an organic photovoltaic device comprising the conductive polymer as a photoelectric conversion material. The conductive polymer has high photon absorption efficiency and improved hole mobility and is prepared by introducing a specific amount of a carbazole compound either into a polymer, consisting only of a donor functional group containing one or more aromatic monomers, or into a donor-acceptor type polymer comprising a repeating acceptor group introduced into a donor functional group. The conductive polymer can be used as a photoelectric conversion material for organic thin film transistors (OTFTs) or organic light-emitting diodes (OLEDs). Furthermore, the invention provides an organic photovoltaic device comprising the carbazole-containing conductive polymer as an electron donor, and thus can achieve high photoelectric conversion efficiency in organic thin film solar cells.

    摘要翻译: 本发明涉及由式1表示的2,7-咔唑聚合物和包含导电聚合物作为光电转换材料的有机光伏器件。 导电聚合物具有高的光子吸收效率和改善的空穴迁移率,并且通过将特定量的咔唑化合物引入仅由含有一个或多个芳族单体的供体官能团组成的聚合物中,或者进入供体 - 受体型 包含引入供体官能团的重复受体基团的聚合物。 导电聚合物可以用作有机薄膜晶体管(OTFT)或有机发光二极管(OLED)的光电转换材料。 此外,本发明提供一种包含含咔唑的导电聚合物作为电子给体的有机光伏器件,因此可以在有机薄膜太阳能电池中实现高的光电转换效率。