发明授权
- 专利标题： Line width roughness control with arc layer open
- 专利标题（中）： 线宽粗糙度控制，电弧层开放
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申请号： US12210777申请日： 2008-09-15
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公开(公告)号： US08158524B2公开(公告)日： 2012-04-17
- 发明人: Kyeong-Koo Chi , Jonathan Kim
- 申请人： Kyeong-Koo Chi , Jonathan Kim
- 申请人地址： US CA Fremont
- 专利权人： Lam Research Corporation
- 当前专利权人： Lam Research Corporation
- 当前专利权人地址： US CA Fremont
- 代理机构： Beyer Law Group LLP
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461
摘要：
To achieve the foregoing and in accordance with the purpose of the present invention a method for etching an etch layer disposed below an antireflective coating (ARC) layer below a patterned mask is provided. The ARC layer is opened, and features are etched into the etch layer through the patterned mask. The opening the ARC layer includes (1) providing an ARC opening gas comprising a halogen containing gas, COS, and an oxygen containing gas, (2) forming a plasma from the ARC opening gas to open the ARC layer, and (3) stopping providing the ARC opening gas to stop the plasma. The patterned mask may be a photoresist (PR) mask having a line-space pattern. COS in the ARC opening gas reduces line width roughness (LWR) of the patterned features of the etch layer.
公开/授权文献
- US20090087996A1 LINE WIDTH ROUGHNESS CONTROL WITH ARC LAYER OPEN 公开/授权日：2009-04-02
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