发明授权
- 专利标题： Single electron transistor operating at room temperature and manufacturing method for same
- 专利标题（中）： 单电子晶体管在室温下工作，制造方法相同
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申请号： US12874146申请日： 2010-09-01
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公开(公告)号： US08158538B2公开(公告)日： 2012-04-17
- 发明人: Jung Bum Choi , Seung Jun Shin
- 申请人： Jung Bum Choi , Seung Jun Shin
- 申请人地址： KR Cheongju-si
- 专利权人： Nanochips, Inc.
- 当前专利权人： Nanochips, Inc.
- 当前专利权人地址： KR Cheongju-si
- 代理机构： Fenwick & West LLP
- 优先权： KR10-2008-0014230 20080216; KR10-2008-0076550 20080805; KR10-2009-0010087 20090209
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/44 ; H01L21/84
摘要：
The present invention relates to a single-electron transistor (SET) operating at room temperature and a method of manufacturing the same, and to be specific, to a single-electron transistor operating at room temperature and a method of manufacturing the same, which are capable of minimizing influence of the gate voltage on tunneling barriers and effectively controlling the electric potential of a quantum dot (QD), by forming the quantum dot using a trenched nano-wire structure and forming the gate to wrap most of the way around the quantum dot.
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