发明授权
- 专利标题： Fabrication of finned memory arrays
- 专利标题（中）： 翅片式存储器阵列的制造
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申请号： US13117364申请日： 2011-05-27
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公开(公告)号： US08163610B2公开(公告)日： 2012-04-24
- 发明人: Seiichi Aritome
- 申请人： Seiichi Aritome
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Leffert Jay & Polglaze, P.A.
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L29/76
摘要：
Methods and apparatus are provided. For an embodiment, a plurality fins is formed in a substrate so that the fins protrude from a substrate. After the plurality fins is formed, the fins are isotropically etched to reduce a width of the fins and to round an upper surface of the fins. A first dielectric layer is formed overlying the isotropically etched fins. A first conductive layer is formed overlying the first dielectric layer. A second dielectric layer is formed overlying the first conductive layer. A second conductive layer is formed overlying the second dielectric layer.
公开/授权文献
- US20110230033A1 FABRICATION OF FINNED MEMORY ARRAYS 公开/授权日：2011-09-22
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