- 专利标题： Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the same
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申请号： US10852287申请日： 2004-05-25
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公开(公告)号： US08164130B2公开(公告)日： 2012-04-24
- 发明人: Sun-ae Seo , In-kyeong Yoo , Myoung-jae Lee , Wan-jun Park
- 申请人： Sun-ae Seo , In-kyeong Yoo , Myoung-jae Lee , Wan-jun Park
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2003-0035562 20030603
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
A nonvolatile memory device including one transistor and one resistant material and a method of manufacturing the nonvolatile memory device are provided. The nonvolatile memory device includes a substrate, a transistor formed on the substrate, and a data storage unit connected to a drain of the transistor. The data storage unit includes a data storage material layer having different resistance characteristics in different voltage ranges.