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    Method of horizontally growing carbon nanotubes and device having the same
    4.
    发明授权
    Method of horizontally growing carbon nanotubes and device having the same 有权
    水平生长碳纳米管的方法及其装置

    公开(公告)号：US07115306B2

    公开(公告)日：2006-10-03

    申请号：US11036379

    申请日：2005-01-18

    申请人： Soo-hwan Jeong ,  Wan-jun Park ,  In-kyeong Yoo ,  Ju-hye Ko

    发明人： Soo-hwan Jeong ,  Wan-jun Park ,  In-kyeong Yoo ,  Ju-hye Ko

    IPC分类号： H05H1/24

    CPC分类号： C30B29/602 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C23C26/00 ,  C30B25/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30469

    摘要： Provided are a method of growing carbon nanotubes and a carbon nanotube device. The method includes: depositing an aluminum layer on a substrate; forming an insulating layer over the substrate to cover the aluminum layer; patterning the insulating layer and the aluminum layer on the substrate to expose a side of the aluminum layer; forming a plurality of holes in the exposed side of the aluminum layer to a predetermined depth; depositing a catalyst metal layer on the bottoms of the holes; and growing the carbon nanotubes from the catalyst metal layer.

    摘要翻译： 提供生长碳纳米管和碳纳米管装置的方法。 该方法包括：在基底上沉积铝层; 在所述基板上形成绝缘层以覆盖所述铝层; 将绝缘层和铝层图案化在基板上以暴露铝层的一侧; 在铝层的暴露侧形成多个孔至预定深度; 在所述孔的底部沉积催化剂金属层; 并从催化剂金属层生长碳纳米管。

    MRAM and methods for manufacturing and driving the same
    6.
    发明授权
    MRAM and methods for manufacturing and driving the same 有权
    MRAM及其制造和驱动方法

    公开(公告)号：US07002841B2

    公开(公告)日：2006-02-21

    申请号：US10701436

    申请日：2003-11-06

    申请人： In-Kyeong Yoo ,  Wan-jun Park

    发明人： In-Kyeong Yoo ,  Wan-jun Park

    IPC分类号： G11C11/34

    CPC分类号： H01L27/226 ,  B82Y10/00 ,  G11C11/16

    摘要： An MRAM having improved integration density and ability to use a magnetic tunneling junction (MTJ) layer having a low MR ratio, and methods for manufacturing and driving the same, are disclosed. The MRAM includes a semiconductor substrate having a bipolar junction transistor (BJT) formed thereon, a bit line coupled to an emitter of the BJT, an MTJ layer coupled to the BJT, a word line coupled to the MTJ layer, a plate line coupled to the BJT so as to be spaced apart from the MTJ layer, and an interlayer dielectric formed between components of the MRAM, wherein the MTJ layer is coupled to a base and a collector of the BJT, the plate line is coupled to the collector, and an amplifying unit for amplifying a signal while data is read out from the MTJ layer is coupled to the bit line, thereby allowing precise reading of the data.

    摘要翻译： 公开了具有改进的集成密度和使用具有低MR比的磁隧道结（MTJ）层的能力的MRAM及其制造和驱动方法。 MRAM包括其上形成有双极结型晶体管（BJT）的半导体衬底，耦合到BJT的发射极的位线，耦合到BJT的MTJ层，耦合到MTJ层的字线，耦合到 BJT与MTJ层间隔开，以及在MRAM的组件之间形成的层间电介质，其中MTJ层耦合到BJT的基极和集电极，板线耦合到集电器，并且 用于在从MTJ层读出数据时放大信号的放大单元被耦合到位线，从而允许精确地读取数据。

    Method of horizontally growing carbon nanotubes and device having the same
    7.
    发明申请
    Method of horizontally growing carbon nanotubes and device having the same 有权
    水平生长碳纳米管的方法及其装置

    公开(公告)号：US20050188444A1

    公开(公告)日：2005-08-25

    申请号：US11036379

    申请日：2005-01-18

    申请人： Soo-hwan Jeong ,  Wan-jun Park ,  In-kyeong Yoo ,  Ju-hye Ko

    发明人： Soo-hwan Jeong ,  Wan-jun Park ,  In-kyeong Yoo ,  Ju-hye Ko

    IPC分类号： B82B3/00 ,  C01B31/02 ,  C23C26/00 ,  C23C28/00 ,  H01J1/304 ,  H01J9/02 ,  C23C16/00

    CPC分类号： C30B29/602 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C23C26/00 ,  C30B25/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30469

    摘要： Provided are a method of horizontally growing carbon nanotubes and a carbon nanotube device. The method includes: depositing an aluminum layer on a substrate; forming an insulating layer over the substrate to cover the aluminum layer; patterning the insulating layer and the aluminum layer on the substrate to expose a side of the aluminum layer; forming a plurality of holes in the exposed side of the aluminum layer to a predetermined depth; depositing a catalyst metal layer on the bottoms of the holes; and horizontally growing the carbon nanotubes from the catalyst metal layer. The carbon nanotubes can be grown in directions rather that horizontally relative to the substrate when laid flat.

    摘要翻译： 提供了水平生长碳纳米管和碳纳米管装置的方法。 该方法包括：在基底上沉积铝层; 在所述基板上形成绝缘层以覆盖所述铝层; 将绝缘层和铝层图案化在基板上以暴露铝层的一侧; 在铝层的暴露侧形成多个孔至预定深度; 在所述孔的底部沉积催化剂金属层; 并从催化剂金属层水平生长碳纳米管。 当平铺时，碳纳米管可以在相对于基底的水平方向上生长。

    Method of manufacturing field emission electrode having carbon nanotubes with conductive particles attached to external walls
    10.
    发明授权
    Method of manufacturing field emission electrode having carbon nanotubes with conductive particles attached to external walls 有权
    制造具有附着到外壁的导电颗粒的碳纳米管的场致发射电极的方法

    公开(公告)号：US08272914B2

    公开(公告)日：2012-09-25

    申请号：US13137743

    申请日：2011-09-09

    申请人： Yo-sep Min ,  Eun-ju Bae ,  Wan-jun Park

    发明人： Yo-sep Min ,  Eun-ju Bae ,  Wan-jun Park

    IPC分类号： H01J1/62 ,  H01J63/02

    CPC分类号： H01J31/127 ,  H01J9/025 ,  H01J29/04

    摘要： Provided are a field emission electrode, a method of manufacturing the field emission electrode, and a field emission device including the field emission electrode. The field emission electrode may include a substrate, carbon nanotubes formed on the substrate, and a conductive layer formed on at least a portion of the surface of the substrate. Conductive nanoparticles may be attached to the external walls of the carbon nanotubes.

    摘要翻译： 提供场致发射电极，制造场发射电极的方法和包括场发射电极的场发射装置。 场发射电极可以包括基板，形成在基板上的碳纳米管，以及形成在基板表面的至少一部分上的导电层。 导电纳米颗粒可以附着在碳纳米管的外壁上。