Invention Grant
- Patent Title: Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the same
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Application No.: US10852287Application Date: 2004-05-25
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Publication No.: US08164130B2Publication Date: 2012-04-24
- Inventor: Sun-ae Seo , In-kyeong Yoo , Myoung-jae Lee , Wan-jun Park
- Applicant: Sun-ae Seo , In-kyeong Yoo , Myoung-jae Lee , Wan-jun Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2003-0035562 20030603
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A nonvolatile memory device including one transistor and one resistant material and a method of manufacturing the nonvolatile memory device are provided. The nonvolatile memory device includes a substrate, a transistor formed on the substrate, and a data storage unit connected to a drain of the transistor. The data storage unit includes a data storage material layer having different resistance characteristics in different voltage ranges.
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