Invention Grant
- Patent Title: Voltage generator capable of preventing latch-up and method thereof
- Patent Title (中): 电压发生器能够防止闩锁及其方法
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Application No.: US12651483Application Date: 2010-01-04
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Publication No.: US08164379B2Publication Date: 2012-04-24
- Inventor: Chen-Jung Chuang , Chin-Yuan Tu , Cheng-Chung Huang , Hong-Jun Hsiao
- Applicant: Chen-Jung Chuang , Chin-Yuan Tu , Cheng-Chung Huang , Hong-Jun Hsiao
- Applicant Address: TW Hsinchu Science Park, Hsin-Chu
- Assignee: NOVATEK Microelectronics Corp.
- Current Assignee: NOVATEK Microelectronics Corp.
- Current Assignee Address: TW Hsinchu Science Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: TW98122241A 20090701
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
A voltage generator capable of preventing latch-up is disclosed. The voltage generator includes a positive charge pump unit, a negative charge pump unit, a second stage charge pump unit, and a control unit. The positive charge pump unit is utilized for generating a positive charge pump voltage according to a first enable signal. The negative charge pump is utilized for generating a negative charge pump voltage according to a second enable signal. The second stage charge pump unit is utilized for generating a gate-on voltage and a gate-off voltage according to a third enable signal and a fourth enable signal. The control unit is utilized for generating the first enable signal, the second enable signal, the third enable signal, and the fourth enable signal and make the second stage charge pump unit generate the gate-on voltage (or the gate-off voltage) in a successively-increasing (or decreasing) manner.
Public/Granted literature
- US20110001534A1 Voltage Generator Capable of Preventing Latch-up and Method Thereof Public/Granted day:2011-01-06
Information query
IPC分类: